ISC 2SD2390

Inchange Semiconductor
Product Specification
2SD2390
Silicon NPN Darlington Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB1560
·High DC current gain
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
IB
Base current
1
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD2390
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=7mA
2.5
V
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=7mA
3.0
V
ICBO
Collector cut-off current
VCB=160V IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=7A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
95
pF
fT
Transition frequency
IC=2A ; VCE=12V
55
MHz
0.5
μs
10.0
μs
1.1
μs
150
UNIT
V
5000
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=10Ω
IB1=- IB2=7mA
VCC=70V
hFE Classifications
O
P
Y
5000-12000
6500-20000
15000-30000
2
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD2390
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
4
2SD2390