Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2390 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V -10 A 1 A 100 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1560 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-7A ; VCE=-4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 230 pF fT Transition frequency IC=-2A ; VCE=-12V 50 MHz 0.8 μs 3.0 μs 1.2 μs -150 UNIT V 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=-7A;RL=10Ω IB1=- IB2=-7mA VCC=-70V hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SB1560 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 4 2SB1560