Inchange Semiconductor Product Specification 2SB1559 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 Absolute maximum ratings(Ta=℃) SYMBOL UNIT -160 V -150 V -5 V Collector current -8 A IB Base current -1 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC CONDITIONS TOR VALUE 固 PARAMETER C U D ON IC M E ES G N A INCH Emitter-base voltage Open emitter Open base Open collector TC=25℃ Inchange Semiconductor Product Specification 2SB1559 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA -2.5 V VBEsat Base-emitter saturation voltage IC=-6A ;IB=-6mA -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-6A ; VCE=-4V Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 160 pF fT Transition frequency IC=1A ; VCE=-12V 65 MHz 导体 半 电 MIN 固 ts Storage time tf Fall time IC=-6A;RL=10Ω IB1=- IB2=-6mA VCC=60V M E S GE N A H INC hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 2 UNIT V 5000 R O T UC D N O IC Turn-on time MAX -150 Switching times ton TYP. 0.7 μs 3.6 μs 0.9 μs Inchange Semiconductor Product Specification 2SB1559 Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SB1559 Silicon PNP Darlington Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4