ISC BD676A

Inchange Semiconductor
Product Specification
BD676A/678A/680A/682
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type BD675A/677A/679A/681
・DARLINGTON
・High DC current gain
APPLICATIONS
・For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BD676A
Collector-base voltage
-60
Open emitter
VEBO
-80
BD682
-100
BD676A
-45
Collector-emitter voltage
Emitter -base voltage
V
BD680A
BD678A
VCEO
UNIT
-45
BD678A
VCBO
VALUE
-60
Open base
V
BD680A
-80
BD682
-100
Open collector
-5
V
IC
Collector current
-4
A
ICM
Collector current-Peak
-6
A
IB
Base current
-0.1
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
BD676A/678A/680A/682
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD676A
V(BR)CEO
VCEsat
VBE(on)
Collector-emitter
breakdown voltage
Collector-emitter
saturation voltage
Emitter-base
voltage
MIN
TYP.
MAX
-45
BD678A
-60
IC=-50mA; IB=0
V
BD680A
-80
BD682
-100
BD676A/678A/680A
UNIT
IC=-2A; IB=-40mA
-2.8
V
BD682
IC=-1.5A; IB=-30mA
BD676A/678A/680A
IC=-2A ; VCE=-3V
BD682
IC=-1.5A ; VCE=-3V
-2.5
-2.5
V
ICBO
Collector
cut-off current
VCB=rated BVCEO; IE=0
Ta=100 ℃
-0.2
-2.0
mA
ICEO
Collector
cut-off current
VCE=1/2rated BVCEO; IB=0
-0.5
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.0
mA
hFE
DC current gain
BD676A/678A/680A
IC=-2A ; VCE=-3V
750
BD682
IC=-1.5A ; VCE=-3V
750
2
Inchange Semiconductor
Product Specification
BD676A/678A/680A/682
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3