Inchange Semiconductor Product Specification BD676A/678A/680A/682 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD675A/677A/679A/681 ・DARLINGTON ・High DC current gain APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD676A Collector-base voltage -60 Open emitter VEBO -80 BD682 -100 BD676A -45 Collector-emitter voltage Emitter -base voltage V BD680A BD678A VCEO UNIT -45 BD678A VCBO VALUE -60 Open base V BD680A -80 BD682 -100 Open collector -5 V IC Collector current -4 A ICM Collector current-Peak -6 A IB Base current -0.1 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD676A/678A/680A/682 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD676A V(BR)CEO VCEsat VBE(on) Collector-emitter breakdown voltage Collector-emitter saturation voltage Emitter-base voltage MIN TYP. MAX -45 BD678A -60 IC=-50mA; IB=0 V BD680A -80 BD682 -100 BD676A/678A/680A UNIT IC=-2A; IB=-40mA -2.8 V BD682 IC=-1.5A; IB=-30mA BD676A/678A/680A IC=-2A ; VCE=-3V BD682 IC=-1.5A ; VCE=-3V -2.5 -2.5 V ICBO Collector cut-off current VCB=rated BVCEO; IE=0 Ta=100 ℃ -0.2 -2.0 mA ICEO Collector cut-off current VCE=1/2rated BVCEO; IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE DC current gain BD676A/678A/680A IC=-2A ; VCE=-3V 750 BD682 IC=-1.5A ; VCE=-3V 750 2 Inchange Semiconductor Product Specification BD676A/678A/680A/682 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3