Inchange Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD676A/678A/680A/682 ・DARLINGTON APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD675A N A H INC Collector-base voltage EMIC GE S BD677A VCBO BD679A VEBO UNIT 45 60 V 80 BD681 100 BD675A 45 Collector-emitter voltage Emitter -base voltage VALUE Open emitter BD677A VCEO R O T UC OND CONDITIONS 60 Open base V BD679A 80 BD681 100 Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 6 A IB Base current 0.1 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD675A VCEO(SUS) VCEsat VBE(ON) ICBO Collector-emitter sustaining voltage TYP. MAX BD677A 60 IC=50mA; IB=0 V BD679A 80 BD681 100 IC=2A; IB=40mA 2.8 BD681 IC=1.5A; IB=30mA 2.5 BD675A/677A/679A IC=2A ; VCE=3V 2.5 BD681 IC=1.5A ; VCE=3V 2.5 BD675A VCB=45V; IE=0 BD677A 导体 半 电 VCB=60V; IE=0 BD679A VCB=80V; IE=0 BD681 VCB=100V; IE=0 Base-emitter voltage Collector cut-off current V V 0.2 mA 0.5 mA 2 mA R O T UC D N O IC M E S GE BD675A VCE=45V; VBE=0 BD677A N A H INC VCE=60V; VBE=0 BD679A VCE=80V; VBE=0 BD681 VCE=100V; VBE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain Collector cut-off current UNIT 45 BD675A/677A/679A Collector-emitter saturation voltage 固 ICEO MIN BD675A/677A/679A IC=2A ; VCE=3V 750 BD681 IC=1.5A ; VCE=3V 750 2 Inchange Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3