Inchange Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PN package ・Low collector saturation voltage APPLICATIONS ・For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 12 V IC Collector current 5.0 A ICM Collector current-peak 10 A IB Base current 2.5 A TC=25℃ 50 W PC Collector power dissipation Derate above 25℃ 0.4 W/℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 2.5 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=3.0A ;IB1=0.3A;L=1.0mH VCEsat Collector-emitter saturation voltage IC=3A ;IB=300mA 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=300mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA ICEX Collector cut-off current VCE=100V;VBE=-1.5V 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.3A ; VCE=5V 60 hFE-2 DC current gain IC=3A ; VCE=5V 40 100 UNIT V 320 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A; VCC=30V IB1=0.3A ,IB2=-0.3A RL=10Ω hFE-1 Classifications M L K 60-120 100-200 160-320 2 0.5 μs 2.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors 4