Inchange Semiconductor Product Specification 2SC2898 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage,high speed ・High power switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 8 A ICM Collector current-Peak 16 A IB Base current 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2898 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; L=100mH V(BR) EBO Emitter-base breakdown voltage IE=10mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=4.0A; IB=0.8A(pulse test) 1.0 V VBEsat Base-emitter saturation voltage IC=4.0A; IB=0.8A(pulse test) 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 50 μA ICEO Collector cut-off current VCE=350V; RBE=∞ 50 μA hFE-1 DC current gain IC=4A ; VCE=5V(pulse test) 15 hFE-2 DC current gain IC=8A ; VCE=5V(pulse test) 7 400 V 7 V Switching times ton Turn-on time ts Storage time tf Fall time 0.8 IC=8A, IB1=-IB2=1.6A VCC≈150V 2 μs 2.0 μs 0.8 μs Inchange Semiconductor Product Specification 2SC2898 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2898 Silicon NPN Power Transistors 4