ISC 2SC3679

Inchange Semiconductor
Product Specification
2SC3679
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage switching transistor
APPLICATIONS
・For switching regulator and
general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
导
半
Absolute maximum ratings (Ta=25℃)
固电
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
C
I
M
E SE
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
INC
OND
G
N
A
H
R
O
T
UC
VALUE
UNIT
900
V
800
V
7
V
IC
Collector current (DC)
5
A
ICM
Collector current -peak
10
A
IB
Base current (DC)
2.5
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3679
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=2A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=12V
fT
COB
体
导
半
Collector output capacitance
固电
Switching times
ton
ts
tf
IN
Storage time
IC=2.0A
IB1=0.3A ,IB2=-1A
VCC=250V, RL=125Ω
Fall time
2
MIN
TYP.
MAX
800
UNIT
V
10
30
6
MHz
75
pF
R
O
T
UC
D
N
O
IC
f=1MHz;VCB=10V
EM
S
E
NG
CHA
Turn-on time
CONDITIONS
1.0
μs
5.0
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC3679
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 outline dimentions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC3679
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC