Inchange Semiconductor Product Specification 2SC3680 Silicon NPN Power Transistors ESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・Switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 3.5 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3680 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A ,IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=3A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=2A ; VCE=12V 800 UNIT V 10 30 105 pF 6 MHz Switching times ton Turn-on time tstg Storage time tf IC=3A;IB1=0.45A; IB2=-1.5A;RL=83Ω VCC=250V Fall time 2 1.0 μs 5.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3680 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC3680 Silicon NPN Power Transistors 4