Inchange Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 2 A PC Collector dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.3 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=3A ; VCE=4V fT Transition frequency IC=0.5A ; VCE=12V 10 MHz COB Output capacitance f=1MHz ; VCB=10V 50 pF 400 UNIT V 10 30 Switching times ton Turn-on time tstg Storage time tf VCC=200V; IC=3A IB1=0.3A;IB2=-0.6A; RL=66.7Ω Fall time 2 1.0 μs 3.0 μs 0.5 μs Inchange Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors 4