Inchange Semiconductor Product Specification 2SC3678 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・Switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 Absolute maximum ratings(Ta=℃) 固电 SYMBOL OND VALUE UNIT 900 V 800 V 7 V Collector current 3 A ICM Collector current-pulse 6 A IB Base current 1.5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCBO VCEO VEBO IC PARAMETER R O T UC CONDITIONS C I M E S E NG Collector-base voltage A H C IN Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector TC=25℃ Inchange Semiconductor Product Specification 2SC3678 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency 体 导 半 固电 Switching times ton ts tf IN Storage time IC=1A; IB1=0.15A;IB2=-0.5A RL=250Ω,VCC=250V Fall time 2 MIN TYP. MAX 800 UNIT V 10 30 R O T UC D N O IC IE=-0.3A ; VCE=12V EM S E NG CHA Turn-on time CONDITIONS 50 pF 6 MHz 1.0 μs 5.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3678 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC3678 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC