ISC 2SC3678

Inchange Semiconductor
Product Specification
2SC3678
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage switching transistor
APPLICATIONS
・Switching regulator and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
导
半
Absolute maximum ratings(Ta=℃)
固电
SYMBOL
OND
VALUE
UNIT
900
V
800
V
7
V
Collector current
3
A
ICM
Collector current-pulse
6
A
IB
Base current
1.5
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VCBO
VCEO
VEBO
IC
PARAMETER
R
O
T
UC
CONDITIONS
C
I
M
E
S
E
NG
Collector-base voltage
A
H
C
IN
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
TC=25℃
Inchange Semiconductor
Product Specification
2SC3678
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.2A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE
DC current gain
IC=1A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
体
导
半
固电
Switching times
ton
ts
tf
IN
Storage time
IC=1A; IB1=0.15A;IB2=-0.5A
RL=250Ω,VCC=250V
Fall time
2
MIN
TYP.
MAX
800
UNIT
V
10
30
R
O
T
UC
D
N
O
IC
IE=-0.3A ; VCE=12V
EM
S
E
NG
CHA
Turn-on time
CONDITIONS
50
pF
6
MHz
1.0
μs
5.0
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC3678
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC3678
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC