Inchange Semiconductor Product Specification 2SC4557 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 550 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4557 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ VCEsat Collector-emitter saturation voltage IC=5A;IB=1A 0.5 V VBEsat Base-emitter saturation voltage IC=5A;IB=1A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=4V fT Transition frequency IE=-1A ; VCE=12V 6 MHz COB Output capacitance VCB=10V;f=1MHz 105 pF 550 UNIT V 10 28 Switching times ton tstg tf Turn-on time Storage time IC=5A;IB1=0.75A; IB2=-1.5A; RL=50Ω VCC=250V Fall time 2 1.0 μs 5.0 μs 0.5 μs Inchange Semiconductor Product Specification 2SC4557 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC4557 Silicon NPN Power Transistors 4