Inchange Semiconductor Product Specification 2SC5669 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PN package ・Complement to type 2SA2031 ・Wide area of safe operation ・Large current capacitance APPLICATIONS ・For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 230 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 15 A ICM Collector current-peak 30 A PC Collectorl power dissipation Ta=25℃ 2.5 W TC=25℃ 140 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC5669 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ 230 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 250 V V(BREBO Emitter-base breakdown voltage IE=5mA; IC=0 6 V Collector-emitter saturation voltage IC=7.5 A;IB=0.75A VBE Base-emitter saturation voltage ICBO VCEsat CONDITIONS MIN TYP. 0.2 MAX UNIT 2.0 V IC=7.5A ; VCE=5V 1.5 V Collector cut-off current VCB=250V; IE=0 100 μA IEBO Emitter cut-off current VEB=4V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 60 hFE-2 DC current gain IC=7.5A ; VCE=5V 35 COB Output capacitance IE=0 ; VCB=10V,f=1MHz 200 pF fT Transition frequency IC=1A ; VCE=5V 15 MHz 0.56 μs 3.3 μs 0.4 μs 160 Switching times ton Turn-on time tstg Storage time tf IC=7.5A;RL=6.67Ω IB1=-IB2=0.75A VCC=50V Fall time 2 Inchange Semiconductor Product Specification 2SC5669 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC5669 Silicon NPN Power Transistors 4