JMNIC 2SD1193

Product Specification
www.jmnic.com
2SD1193
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type 2SB883
・High DC current gain
・High current capacity and wide ASO
・Low saturation voltage
APPLICATIONS
・Motor drivers, printer hammer drivers,
relay drivers,voltage regulator control.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
70
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
15
A
ICP
Collector current (Pulse)
20
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
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Product Specification
www.jmnic.com
2SD1193
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdown voltage
IC=50mA ;RBE=∞
70
V
VCBO
Collector-base breakdown voltage
IC=5mA ;IE=0
60
V
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=14mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=14mA
2.0
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3
mA
hFE
DC current gain
IC=7A ; VCE=2V
Transition frequency
IC=7A ; VCE=5V
fT
CONDITIONS
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MIN
TYP.
MAX
UNIT
2000
20
MHz
Product Specification
www.jmnic.com
2SD1193
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
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