Product Specification www.jmnic.com 2SD1193 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SB883 ・High DC current gain ・High current capacity and wide ASO ・Low saturation voltage APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 15 A ICP Collector current (Pulse) 20 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD1193 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 70 V VCBO Collector-base breakdown voltage IC=5mA ;IE=0 60 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=14mA 1.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=14mA 2.0 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 3 mA hFE DC current gain IC=7A ; VCE=2V Transition frequency IC=7A ; VCE=5V fT CONDITIONS JMnic MIN TYP. MAX UNIT 2000 20 MHz Product Specification www.jmnic.com 2SD1193 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions JMnic