isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.5A ·Low Saturation Voltage ·Complement to Type 2SB881 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 70 V 60 V 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak 10 A Collector Power Dissipation @ Ta=25℃ 1.75 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1191 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1191 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 7mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 7mA 2.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μA IEBO Emitter Cutoff Current 3.0 mA hFE DC Current Gain fT Turn-on Time tstg Storage Time tf IC= 3.5A; VCE= 5V IC= 3A, IB1= -IB2= 6mA RL= 6.7Ω; VCC= 20V; PW= 50μs; Duty Cycle≤1% Fall Time isc Website：www.iscsemi.cn TYP. n c . i m e s c is . w w w ton MIN VEB= 5V; IC= 0 IC= 3.5A; VCE= 2V Current-Gain—Bandwidth Product Switching times CONDITIONS 2 MAX UNIT 2000 20 MHz 0.6 μs 3.0 μs 1.7 μs