Inchange Semiconductor Product Specification 2SB1287 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1765 ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 固 Fig.1 simplified outline (TO-220Fa) and symbol D N O IC Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER R O T UC M E S GE VALUE UNIT Open emitter -100 V Collector -emitter voltage Open base -100 V Emitter-base voltage Open collector -8 V N A H C Collector-base voltage IN CONDITIONS IC Collector current -2 A ICM Collector current-peak -3 A PC Collector power dissipation Ta=25℃ 2 W TC=25℃ 20 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1287 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -100 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -3.0 mA hFE DC current gain IC=-1A ; VCE=-2V COB Output capacitance 体 半导 固电 MIN 1000 D N O IC N A H INC 2 MAX UNIT 10000 R O T UC IE=0 ; VCB=-10V;f=1MHz M E S GE TYP. 35 pF Inchange Semiconductor Product Specification 2SB1287 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3