Inchange Semiconductor Product Specification 2SD401A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB546A ・Collector current IC=2A ・Collector-collector voltage:VCEO=150V(Min) APPLICATIONS ・For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A ICM Collector current-peak 3 A PD Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD401A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA; IE=0 200 V V(BR)EBO Emitter-base breakdown votage IE=0.5mA; IB=0 5 V Collector-emitter saturation voltage IC=500m A;IB=50m A 1.0 V ICBO Collector cut-off current VCB=150V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE DC current gain IC=0.4A ; VCE=10V Transition frequency IC=0.4A ; VCE=10V;f=1MHz VCEsat fT CONDITIONS hFE classifications M L K 40-80 60-120 100-200 2 MIN TYP. 40 MAX UNIT 200 5 MHz Inchange Semiconductor Product Specification 2SD401A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3