Inchange Semiconductor Product Specification BD533/535/537 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD534/536/538 ・Low saturation voltage APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD533 VCBO VCEO Collector-base voltage Collector-emitter voltage BD535 Open emitter Emitter-base voltage 60 BD537 80 BD533 45 BD535 UNIT 45 Open base BD537 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 8 A IE Emitter current 8 A IB Base current 1 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD533/535/537 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat-1 Collector-emitter saturation voltage IC=2 A;IB=0.2 A VCEsat-2 Collector-emitter saturation voltage IC=6 A;IB=0.6 A Base-emitter on voltage IC=2A ; VCE=2V VBE ICBO ICES Collector cut-off current Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain BD533 VCB=45V; IE=0 BD535 VCB=60V; IE=0 BD537 VCB=80V; IE=0 BD533 VCE=45V; VBE=0 BD535 VCE=60V; VBE=0 BD537 VCE=80V; VBE=0 hFE-3 DC current gain (All device) hFE-4 fT DC current gain (All device) Transition frequency MAX UNIT 0.8 V 0.8 V 1.5 V 0.1 mA 0.1 mA 1 mA 20 IC=10mA ; VCE=5V BD537 DC current gain TYP. VEB=5V; IC=0 BD533/535 hFE-2 MIN 15 IC=0.5A ; VCE=2V Group: J 40 30 75 40 100 IC=2A ; VCE=2V Group: K Group: J 15 IC=3A ; VCE=2V Group: K 20 IC=0.5A ; VCE=1V 2 3 12 MHz Inchange Semiconductor Product Specification BD533/535/537 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3