Inchange Semiconductor Product Specification BD243/A/B/C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD244/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 R O T UC Absolute maximum ratings (Ta=25℃) 固 SYMBOL PARAMETER BD243 Collector-base voltage N A H INC Open emitter BD243B VEBO UNIT 45 60 V 80 100 BD243 45 Collector-emitter voltage Emitter-base voltage VALUE BD243C BD243A VCEO OND EMIC GE S BD243A VCBO CONDITIONS 60 Open base V BD243B 80 BD243C 100 Open collector 5 V IC Collector current 6 A ICM Collector current-peak 10 A IB Base current 2 A PC Collector power dissipation 65 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD243/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 VCEO(SUS) VCEsat Collector-emitter sustaining voltage MIN TYP. MAX UNIT 45 BD243A 60 IC=30mA; IB=0 V BD243B 80 BD243C 100 Collector-emitter saturation voltage IC=6A;IB=1 A 1.5 V VBE Base-emitter on voltage IC=6A ; VCE=4V 2.0 V ICEO Collector cut-off current 0.7 mA BD243/A BD243B/C ICES 体 半导 固电 VCE=60V; IB=0 BD243 VCE=45V; VBE=0 BD243A VCE=60V; VBE=0 Collector cut-off current R O T UC OND IC M E ES BD243B G N A CH BD243C IN VCE=30V; IB=0 VCE=80V; VBE=0 VCE=100V; VBE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.3A ; VCE=4V 30 hFE-2 DC current gain IC=3A ; VCE=4V 15 2 0.4 mA 1 mA Inchange Semiconductor Product Specification BD243/A/B/C Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3