Inchange Semiconductor Product Specification BD244/A/B/C Silicon PNP Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type BD243/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD244 Collector-base voltage -60 Open emitter VEBO -80 BD244C -100 BD244 -45 Collector-emitter voltage Emitter-base voltage V BD244B BD244A VCEO UNIT -45 BD244A VCBO VALUE -60 Open base V BD244B -80 BD244C -100 Open collector -5 V IC Collector current -6 A ICM Collector current-peak -10 A IB Base current -2 A PC Collector power dissipation 65 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD244/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD244 VCEsat Collector-emitter sustaining voltage TYP. MAX UNIT -45 BD244A VCEO(SUS) MIN -60 IC=-30mA; IB=0 V BD244B -80 BD244C -100 Collector-emitter saturation voltage IC=-6A;IB=-1 A -1.5 V VBE Base-emitter on voltage IC=-6A ; VCE=-4V -2.0 V ICEO Collector cut-off current -0.7 mA -0.4 mA 1 mA BD244/A ICES VCE=-30V; IB=0 BD244B/C VCE=-60V; IB=0 BD244 VCE=-45V; VBE=0 BD244A VCE=-60V; VBE=0 BD244B VCE=-80V; VBE=0 BD244C VCE=-100V; VBE=0 Collector cut-off current IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.3A ; VCE=-4V 30 hFE-2 DC current gain IC=-3A ; VCE=-4V 15 2 Inchange Semiconductor Product Specification BD244/A/B/C Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3