Inchange Semiconductor Product Specification BD176 BD178 BD180 Silicon PNP Power Transistors ・ DESCRIPTION With TO-126 package ・Complement to type BD175 /177 /179 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 R O T UC Absolute maximum ratings (Ta=25℃) 固 SYMBOL VCBO VCEO PARAMETER CONDITIONS BD176 D N O IC M E S E BD178 INCH BD180 -80 BD176 -45 Collector-emitter voltage BD178 Open base BD180 VEBO Emitter -base voltage IC UNIT -45 Collector-base voltage ANG Open emitter VALUE -60 -60 V V -80 Open collector -5 V Collector current (DC) -3 A ICM Collector current-Peak -7 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD176 BD178 BD180 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage Base-emitter on voltage VBE CONDITIONS MAX UNIT IC=-1A; IB=-0.1A -0.8 V IC=-1A ; VCE=-2V -1.3 V BD176 VCEO(SUS) Collector-emitter sustaining voltage BD178 IEBO hFE-1 Collector cut-off current IC=-0.1A; IB=0 hFE-2 BD178 VCB=-60V; IE=0 BD180 VCB=-80V; IE=0 -100 Emitter cut-off current VEB=-5V; IC=0 DC current gain IC=-150mA ; VCE=-2V Transition frequency R O T UC -1 D N O IC M E S GE DC current gain N A H INC fT VCB=-45V; IE=0 固电 10 16 40-100 63-160 100-250 40 IC=-1A ; VCE=-2V 15 IC=-250mA; VCE=-10V 3 hFE-1 Classifications 6 V -60 -80 BD176 体 半导 TYP. -45 BD180 ICBO MIN ※ classification 16 :only BD176 2 μA mA 250 MHz Inchange Semiconductor Product Specification BD176 BD178 BD180 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3