isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUF410A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 3 A IBM Base Current-peak 4.5 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUF410A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.9 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.1 V ICER Collector Cutoff Current VCE=VCEV; RBE= 100Ω VCE=VCEV; RBE= 100Ω;TC=100℃ 0.2 1.0 mA ICEV Collector Cutoff Current VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃ 0.2 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA B B MIN TYP. MAX UNIT 450 V 7 V Switching Times; Resistive Load ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A;IB1= 0.5A;VCC= 50V; VBB= -5V, RBB= 1.2Ω;L= 0.5mH Vclamp= 400V 0.8 μs 0.05 μs