isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ21194 DESCRIPTION ·Total Harmonic Distortion Characterized ·High DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Pulsed 30 A IB Base Current-Continuous 5 A PD Total Power Dissipation (TC=25℃) 250 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C ThermalResistance Junction To Case 0.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ21194 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=8A ;IB=0.8A 1.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=16A ;IB=3.2A 4 V VBE(on) Base-Emitter On Voltage IC=8A ; VCE=5V 2.2 V ICEO Collector Cutoff Current VCE=200V,IB=0 0.1 mA ICEX Collector Cutoff Current VCE=250V; VBE(off)=1.5V 0.1 mA IEBO Emitter Cutoff Current VEB=5V; IC=0 100 μA hFE-1 DC Current Gain IC=8A; VCE=5V 25 hFE-2 DC Current Gain IC=16A; VCE=5V 8 COB Collector Capacitance IE= 0; f=1MHz ; VCB=-10V Current Gain-Bandwidth Product IC=1A ;VCE= 10V; ftest=1MHz fT isc Website：www.iscsemi.cn CONDITIONS B MIN MAX 250 B 2 TYP. V 75 500 4 UNIT pF MHz