ISC MJ3771

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ3771
DESCRIPTION
·Low Collector-Emitter Saturation VoltageVce(sat)=1V(Max)@Ic=15A
·Low Leakage Icbo=1mA(max)@50V
·High Current-Gain-Bandwidth ProductfT=2MHz(min)@Ic=1A
APPLICATIONS
·Designed for power amplifier and switching applications.
·For ultimate circuit performance based on the design
requirements.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
7.5
A
PC
Collector Power [email protected]=25℃
200
W
TJ
Junction Temperature
200
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ3771
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=0.2A; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=15A; IB= 1.5A
1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 30A; IB=6A
4
V
VBE(on)
Base-Emitter On Voltage
IC=15A; VCE=4V
1.7
V
ICEX
Collector Cutoff Current
VCE=50V; VBE(off)=1.5V
VCE=30V; VBE(off)=1.5V, Tc=150℃
1
2
mA
ICBO
Collector Cutoff Current
VCE=50V; IE= 0
1
mA
ICEO
Collector Cutoff current
VCE=30V; IC= 0
2
mA
IEBO
Emitter Cutoff current
VEB=5V; IC= 0
1
mA
hFE-1
DC Current Gain
IC=15A; VCE=4V
15
hFE-2
DC Current Gain
IC=30A; VCE=4V
5
Current-Gain-Bandwidth Product
IC=1A; VCE=4V; ftest=1MHz
2
fT
isc Website:www.iscsemi.cn
40
UNIT
V
60
MHz