isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ3771 DESCRIPTION ·Low Collector-Emitter Saturation VoltageVce(sat)=1V(Max)@Ic=15A ·Low Leakage Icbo=1mA(max)@50V ·High Current-Gain-Bandwidth ProductfT=2MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and switching applications. ·For ultimate circuit performance based on the design requirements. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ3771 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC=0.2A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=15A; IB= 1.5A 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB=6A 4 V VBE(on) Base-Emitter On Voltage IC=15A; VCE=4V 1.7 V ICEX Collector Cutoff Current VCE=50V; VBE(off)=1.5V VCE=30V; VBE(off)=1.5V, Tc=150℃ 1 2 mA ICBO Collector Cutoff Current VCE=50V; IE= 0 1 mA ICEO Collector Cutoff current VCE=30V; IC= 0 2 mA IEBO Emitter Cutoff current VEB=5V; IC= 0 1 mA hFE-1 DC Current Gain IC=15A; VCE=4V 15 hFE-2 DC Current Gain IC=30A; VCE=4V 5 Current-Gain-Bandwidth Product IC=1A; VCE=4V; ftest=1MHz 2 fT isc Website：www.iscsemi.cn 40 UNIT V 60 MHz