ISC MJ4502

Inchange Semiconductor
Product Specification
MJ4502
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type MJ802
・Excellent safe operating area
APPLICATIONS
・For use as an output device in
complementary audio amplifiers
to 100-Watts music power per
channel
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-90
V
VEBO
Emitter-base voltage
Open collector
-4
V
IC
Collector current
-30
A
IB
Base current
-7.5
A
PC
Collector power dissipation
200
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
0.875
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
MJ4502
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.2A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-7.5A; IB=-0.75A
-0.8
V
VBEsat
Base-emitter saturation voltage
IC=-7.5A; IB=-0.75A
-1.3
V
VBE
Base-emitter on voltage
IC=-7.5A ; VCE=-2V
-1.3
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
TC=150℃
-1.0
-5.0
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
mA
hFE
DC current gain
IC=-7.5A ; VCE=-2V
25
Transition frequency
IC=-1A ; VCE=-10V;f=1.0MHz
2.0
fT
CONDITIONS
2
MIN
TYP.
MAX
-90
UNIT
V
100
MHz
Inchange Semiconductor
Product Specification
MJ4502
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3