Inchange Semiconductor Product Specification MJ4502 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ802 ・Excellent safe operating area APPLICATIONS ・For use as an output device in complementary audio amplifiers to 100-Watts music power per channel PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -90 V VEBO Emitter-base voltage Open collector -4 V IC Collector current -30 A IB Base current -7.5 A PC Collector power dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJ4502 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 VCEsat Collector-emitter saturation voltage IC=-7.5A; IB=-0.75A -0.8 V VBEsat Base-emitter saturation voltage IC=-7.5A; IB=-0.75A -1.3 V VBE Base-emitter on voltage IC=-7.5A ; VCE=-2V -1.3 V ICBO Collector cut-off current VCB=-100V; IE=0 TC=150℃ -1.0 -5.0 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 mA hFE DC current gain IC=-7.5A ; VCE=-2V 25 Transition frequency IC=-1A ; VCE=-10V;f=1.0MHz 2.0 fT CONDITIONS 2 MIN TYP. MAX -90 UNIT V 100 MHz Inchange Semiconductor Product Specification MJ4502 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3