isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO=-80V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC=-3A ·Low Collector Saturation Voltage: VCE (sat)=-2.0V(Max.)@ IC=-3A APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -8 A IB Base Current-Continunous -0.1 A PC Collector Power Dissipation @TC=25℃ 90 W Tj Junction Temperature 200 ℃ -55~+200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W isc Website：www.iscsemi.cn MJ901 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJ901 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC=-0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-3A; IB=-12mA -2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC=-8A; IB=-40mA -4.0 V VBE(on) Base-Emitter On Voltage IC=-3A, VCE=-3V -2.5 V ICER Collector Cutoff Current VCE=-80V; RBE=1kΩ VCE=-80V; RBE=1kΩ; TC=150℃ -1.0 -5.0 mA ICEO Collector Cutoff Current VCE=-40V; IB= 0 -0.5 mA IEBO Emitter Cutoff Current VEB=-5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC=-3A, VCE=-3V 1000 hFE-2 DC Current Gain IC=-4A, VCE=-3V 750 isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX -80 UNIT V