Inchange Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5881 2N5882 APPLICATIONS ・For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5879 VCBO Collector-base voltage -60 Open base 2N5880 VEBO V -80 2N5879 Collector-emitter voltage Emitter-base voltage UNIT -60 Open emitter 2N5880 VCEO VALUE V -80 Open collector -5 V IC Collector current -15 A ICM Collector current-peak -30 A IB Base current -5 A PD Total Power Dissipation 160 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.1 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5879 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT -60 IC=-0.2A ;IB=0 2N5880 V -80 VCEsat-1 Collector-emitter saturation voltage IC=-7A;IB=-0.7A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-15A;IB=-3.75A -4.0 V Base-emitter saturation voltage IC=-15A;IB=-3.75A -2.5 V VBE Base-emitter on voltage IC=-6A ; VCE=-4V -1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 -0.5 mA ICEO Collector cut-off current -1.0 mA VBEsat 2N5879 2N5880 VCE=-30V; IB=0 VCE=-40V; IB=0 ICEX Collector cut-off current VCE=ratedVCE; VBE=-1.5V TC=150℃ -0.5 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-2A ; VCE=-4V 35 hFE-2 DC current gain IC=-6A ; VCE=-4V 20 hFE-3 DC current gain IC=-15A ; VCE=-4V 4 Trainsistion frequency IC=-1A ; VCE=-10V 4 fT 2 100 MHz Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3