IGBT Module IC80 = VCES = VCE(sat)typ. = PSII 50/06* Preliminary Data Sheet 48 A 600 V 2.3 V S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 typical picture, for pin configuration see outline drawing t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V 69 48 A A 100 VCES A 10 µs 208 W TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; 2.3 2.8 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V 2.8 V V 6.5 V 0.8 4.4 mA mA 100 nA Inductive load, TVJ = 125°C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 Ω 50 55 300 30 1.8 1.4 ns ns ns ns mJ mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2.8 nF RthJC RthJH (per IGBT) 1.2 0.6 K/W K/W with heatsink compound (0.42 K/m.K; 50 µm) *NTC optional Features • • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied Applications • • • • AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages • • • • • Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 40 A; TVJ = 25°C TVJ = 125°C IRM trr IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 15 70 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 2.6 1.3 K/W K/W 56 35 A A Characteristic Values min. typ. max. 2.32 1.58 2.59 V V t e e h r s e a d t n a u d l l t e i t v n i s t e t a t m c n p u t o d l o e r p dev Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 Module Symbol TVJ Tstg Conditions 5.0 3375 5.25 kΩ K Maximum Ratings -40...+125 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M5) a Max. allowable acceleration 3 26 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 86 g Package style and outline Dimensions in mm (1mm = 0.0394“) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 150 IC 150 VGE= 17 V 15 V 13 V A 120 A 120 IC 90 VGE= 17 V 15 V 13 V 90 11V 60 60 TVJ = 25°C TVJ = 125°C 9V 30 0 1 0 42T60 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n p te odu elo pr dev 2 3 4 5 V 6 0 1 2 3 4 VCE 5 V 6 VCE Fig. 1 Typ. output characteristics 150 9V 30 42T60 0 11V Fig. 2 Typ. output characteristics 90 A 75 A 120 IF VCE = 20 V IC 90 60 45 TVJ = 125°C 60 TVJ = 125°C 30 0 TVJ = 25°C 30 TVJ = 25°C 15 42T60 4 6 8 10 12 42T60 0 0,0 14 V 16 0,5 1,0 1,5 2,0 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 150 50 20 V 40 A 15 VGE VCE = 300 V IC = 50 A 10 120 ns trr IRM 90 30 TVJ = 125°C VR = 300 V IF = 30 A 20 5 trr 60 30 10 IRM 0 42T60 0 40 80 120 QG Fig. 5 Typ. turn on gate charge nC 160 0 42T60 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 10,0 mJ Eon 4 100 td(on) ns 7,5 75 mJ t RG = 22 Ω TVJ = 125°C 0,0 Eon t 50 2 25 1 40 RG = 22 Ω TVJ = 125°C A 80 0 0 120 0 Fig. 7 Typ. turn on energy and switching 40 80 IC mJ 3 ns 60 t Eoff Eoff 2 1 VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C 42T60 0 10 20 30 40 40 1 20 0 50 Ω 60 VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C tf 0 10 20 30 RG 400 42T60 200 0 50 Ω 60 40 Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 K/W A ICM ns RG Fig. 9 Typ. turn on energy and switching 120 600 td(off) tr 2 0 120 mJ Eon 3 42T60 A Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 80 td(on) Eon 100 tf IC 4 200 VCE = 300 V VGE = ±15 V t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev 42T60 0 300 td(off) VCE = 300 V VGE = ±15 V 2,5 ns Eoff 3 Eoff tr 5,0 400 90 ZthJC RG = 22 Ω TVJ = 125°C diode 1 IGBT 0,1 60 0,01 30 0 single pulse 0,001 42T60 0 100 200 300 400 500 600 700 V 0,0001 0,00001 0,0001 0,001 VCE Fig. 11 Reverse biased safe operating area VID...75-06P1 0,01 0,1 1 s 10 t Fig. 12 Typ. transient thermal impedance RBSOA 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 t