IGBT Module IC80 = VCES = VCE(sat)typ. = PSII 75/12* Preliminary Data Sheet S15 R15 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 typical picture, for pin configuration see outline drawing IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n p te odu elo pr dev Conditions Maximum Ratings TVJ = 25°C to 150°C VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff 1200 V ± 20 V 90 60 A A 100 VCES A 10 µs 379 W TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions (TVJ VCE(sat) 60 A 1200 V 2.7 V Characteristic Values = 25°C, unless otherwise specified) min. typ. max. IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; 2.7 3.0 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 60 A VGE = 15/0 V; RG = 22 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) *NTC optional Features • 3.2 V V • • • • 6.5 V • 3.7 12.5 mA mA 200 nA 100 70 500 70 9.1 6.7 ns ns ns ns mJ mJ 3.3 nF 0.66 0.33 K/W K/W Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied Applications • • • • AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages • • • • • Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C 100 60 Symbol Conditions Characteristic Values min. typ. max. VF IF = 60 A; IRM trr IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V RthJC RthJH Maximum Ratings TVJ = 25°C TVJ = 125°C 2.28 1.67 A A 2.6 V V 41 200 A ns t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev 0.66 K/W K/W 1.32 with heatsink compound (0.42 K/m.K; 50 µm) Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md a Conditions Characteristic Values min. typ. max. T = 25°C 4.75 Conditions 5.0 3375 Maximum Ratings -40...+125 -40...+150 °C °C IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Mounting torque (M5) 3 26 50 Nm lb.in. m/s 2 Max. allowable acceleration Symbol dS dA Weight 5.25 kΩ K Conditions Characteristic Values min. typ. max. Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 mm mm 86 g Package style and outline Dimensions in mm (1mm = 0.0394“) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 120 TJ = 25°C A 100 IC 120 A TJ = 125°C 100 VGE =17 V 15 V 13 V 80 VGE =17 V 15 V IC 13 V 80 11 V 11 V 60 60 40 40 9V 9V 20 20 0 0,0 81T120 0,5 81T120 0 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n p te odu elo pr dev 1,0 1,5 2,0 2,5 0,0 3,0 V 0,5 1,0 1,5 2,0 2,5 VCE Fig. 1 Typ. output characteristics 120 VCE = 20 V A TJ = 25°C 100 IC 60 180 TJ = 125°C A 150 TJ = 25°C 120 90 40 60 20 0 3,5 V Fig. 2 Typ. output characteristics IF 80 3,0 VCE 30 81T120 5 6 7 8 9 10 DWLP55-12 0 0,5 11 V 1,0 1,5 2,0 2,5 Fig. 3 Typ. transfer characteristics 20 3,0 V 3,5 VF VGE Fig. 4 Typ. forward characteristics of free wheeling diode 120 V A VGE 15 IRM VCE = 600 V IC = 50 A 300 ns trr 200 80 trr 10 40 IRM 5 0 81T120 0 50 100 150 200 QG 250 nC Fig. 5 Typ. turn on gate charge 0 TJ = 125°C VR = 600 V IF = 50 A 100 81T120 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 24 mJ Eon 18 ns Eoff ns 500 td(off) 10 t Eoff RG = 22 Ω TJ = 125°C 400 t 8 VCE = 600 V VGE = ±15 V Eon 6 VCE = 600 V VGE = ±15 V 300 4 RG = 22 Ω TJ = 125°C 200 30 2 t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev 81T120 0 600 mJ 60 tr 6 0 12 90 td(on) 12 120 20 40 60 80 100 A 0 0 0 20 40 60 VCE = 600 V td(on) mJ V = ±15 V GE IC = 50 A TJ = 125°C Eon 15 10 0 Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 240 10 ns mJ VCE = 600 V 180 Eon t 8 Eoff VGE = ±15 V IC = 50 A TJ = 125°C 60 81T120 0 10 20 30 40 50 60 70 80 90 100 Ω t 4 600 2 300 0 0 81T120 tf 0 10 20 30 40 50 60 70 80 90 100 Ω 0 RG Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 1 A K/W 0,1 100 ZthJC 80 diode 0,01 RG = 22 Ω TJ = 125°C VCEK < VCES 60 0,0001 20 81T120 0 200 400 600 IGBT 0,001 40 0 1200 Eoff 900 Fig. 9 Typ. turn on energy and switching ICM ns 6 RG 120 1500 td(off) 120 tr 5 0 100 A IC Fig. 7 Typ. turn on energy and switching 20 81T120 80 IC 100 tf 800 1000 1200 V single pulse 0,00001 0,00001 0,0001 0,001 0,01 0,1 s 1 t VCE Fig. 11 Reverse biased safe operating area VID...75-12P1 Fig. 12 Typ. transient thermal impedance RBSOA 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20