IXYS IXFR140N20P

PolarHTTM HiPerFET IXFR 140N20P
Power MOSFET
VDSS = 200 V
ID25 = 90 A
RDS(on) ≤ 22 m Ω
≤ 200 ns
trr
ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 175° C
200
V
VDGR
TJ = 25° C to 175° C; RGS = 1 MΩ
200
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25° C
90
A
ID(RMS)
External lead current limit
75
A
IDM
TC = 25° C, pulse width limited by TJM
280
A
IAR
TC = 25° C
60
A
EAR
TC = 25° C
100
mJ
EAS
TC = 25° C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
TC = 25° C
300
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
°C
2500
V~
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS, 1 minute
Md
Terminal torque
Mounting torque
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
Weight
5
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 140A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
V
ISOPLUS247 (IXFR)
E153432
G
© 2006 IXYS All rights reserved
TJ = 150° C
17
V
±200
nA
25
250
µA
µA
22
mΩ
mΩ
S
G = Gate
S = Source
(Isolated Tab)
D = Drain
Features
l
l
l
l
l
International standard isolated
package
UL recognized package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Advantages
l
5.0
D
l
l
Easy to mount
Space savings
High power density
DS99298E(12/05)
IXFR 140N20P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
50
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
84
S
7500
pF
1800
pF
280
pF
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
td(off)
RG = 3.3 Ω (External)
30
ns
35
ns
150
ns
90
ns
240
nC
50
nC
100
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.5 ° C/W
RthJC
RthCS
ISOPLUS247
° C/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
90
A
ISM
Repetitive
280
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
QRM
IRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
0.6
6
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
200 ns
µC
Α
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
IXFR 140N20P
Fig. 1. Output Characte r is tics
@ 25ºC
Fig. 2. Exte nde d Output Characte r is tics
@ 25ºC
300
140
V GS = 10V
9V
8V
120
9V
240
100
210
I D - Amperes
I D - Amperes
V GS = 10V
270
80
7V
60
40
6V
8V
180
150
120
7V
90
60
20
6V
30
5V
0
0
0
0.5
1
1.5
2
0
2.5
1
2
3
V D S - V olts
Fig. 3. Output Characte r is tics
@ 150ºC
4
5
6
V D S - V olts
7
8
9
10
Fig. 4. RDS(on ) Norm alize d to ID = 70A
V alue vs . Junction Te m pe r atur e
140
V GS = 10V
9V
8V
3
R D S ( o n ) - Normalized
120
I D - Amperes
100
7V
80
60
6V
40
5V
20
0
V GS = 10V
2.5
I D = 140A
2
I D = 70A
1.5
1
0.5
0
1
2
3
4
V D S - V olts
5
-50
6
-25
Fig. 5. RDS(on) Nor m alize d to
50
75
100
125
150
175
150
175
90
TJ = 175 ºC
80
3.5
Ext ernal Lead C urrent Lim it
70
3
2.5
I D - Amperes
R D S ( o n ) - Normalized
25
TJ - Degrees Centigrade
Fig . 6. Dr ain C u r r e n t vs . C as e
T e m p e r atu r e
ID = 70A V alue vs . Dr ain Cur re nt
4
0
V GS = 10V
V GS = 15V
2
1.5
60
50
40
30
20
1
10
TJ = 25 ºC
0
0.5
0
50
100
150
200
I D - A mperes
© 2006 IXYS All rights reserved
250
300
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
IXFR 140N20P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
225
120
110
200
100
90
80
- Siemens
150
125
60
fs
100
70
75
TJ = 150 ºC
50
25 ºC
g
I D - Amperes
175
25 ºC
40
150 ºC
30
20
-40 ºC
25
TJ = -40 ºC
50
10
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
40
80
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
160
200
240
Fig. 10. Gate Char ge
10
350
V DS = 100V
9
300
I D = 70A
8
250
I G = 10m A
7
V G S - Volts
I S - Amperes
120
I D - A mperes
200
150
6
5
4
3
100
TJ = 150 ºC
2
50
TJ = 25 ºC
1
0
0
0.4
0.6
0.8
1
1.2
V S D - V olts
0
1.4
25
50
75
Q
100 125 150 175 200 225 250
G
- nanoCoulombs
Fig . 12. Fo r w ar d -Bias
Safe Op e r atin g A r e a
Fig. 11. Capacitance
100,000
1000
25µs
R DS (o n ) Lim it
Ciss
10,000
I D - Amperes
Capacitance - picoFarads
f = 1M Hz
Cos s
1,000
100
100µs
1m s
10m s
10
Crs s
DC
TJ = 175 ºC
TC = 25 ºC
100
1
0
5
10
15
20
25
V DS - V olts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
VD
S
- V olts
100
1000
IXFR 140N20P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
R( t h ) J C - ºC / W
1.00
0.10
0.01
1
10
100
Pulse Width - milliseconds
© 2006 IXYS All rights reserved
1000