IXYS IXFT30N60P

PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
VDSS = 600
V
ID25 = 30
A
RDS(on) ≤ 240 m Ω
≤ 200 ns
trr
IXFH 30N60P
IXFT 30N60P
IXFV 30N60P
IXFV 30N60PS
PLUS220 (IXFV)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
600
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
600
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25° C
30
A
IDM
TC = 25° C, pulse width limited by TJM
80
A
IAR
TC = 25° C
30
A
EAR
TC = 25° C
50
mJ
EAS
TC = 25° C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
20
V/ns
PD
TC = 25° C
500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
FC
Mounting torque
Mounting force
Weight
TO-247
TO-268
PLUS220
(TO-247)
(PLUS220)
BVDSS
VGS = 0 V, ID = 250 µA
600
VGS(th)
VDS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±30 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
g
g
g
Characteristic Values
Min. Typ.
Max.
TJ = 125° C
D
S
D (TAB)
PLUS220 SMD (IXFV...S)
G
D (TAB)
S
TO-247 (IXFH)
G
D
D (TAB)
S
TO-268 (IXFT)
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb.
6
5
4
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
G
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
V
5.0
V
±100
nA
25
250
µA
µA
240
mΩ
Features
l
Fast Recovery diode
l
Unclamped Inductive Switching (UIS)
rated
l
International standard packages
l
Low package inductance
- easy to drive and to protect
DS99316E(03/06)
IXFH 30N60P IXFT 30N60P
IXFV 30N60P IXFV 30N60PS
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
15
27
S
4000
pF
430
pF
42
pF
Crss
td(on)
29
ns
tr
VGS = 10 V, VDS = 0.5 ID25
20
ns
td(off)
RG = 4 Ω (External)
80
ns
25
ns
82
nC
28
nC
28
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.25 ° C/W
RthJC
RthCS
TO-247, PLUS220
° C/W
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
30
A
ISM
Repetitive
80
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
VR = 100V, VGS = 0 V
0.8
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFH 30N60P IXFT 30N60P
IXFV 30N60P IXFV 30N60PS
Fig. 1. Output Characte ris tics
Fig. 2. Exte nde d Output Characte ris tics
@ 25º C
@ 25º C
30
60
V GS = 10V
27
24
40
I D - Amperes
I D - Amperes
45
6.5V
18
15
6V
12
9
5.5V
6
3
3
4
5
30
25
6V
20
10
5.5V
5
0
2
6.5V
35
15
5V
1
8V
7V
50
21
0
V GS = 10V
55
8V
7V
6
7
5V
0
8
0
V D S - V olts
Fig. 3. Output Characte ris tics
30
9
12
15
18
V D S - V olts
21
24
27
30
3.4
V GS = 10V
27
3.1
7V
21
R D S ( o n ) - Normalized
24
I D - Amperes
6
Fig. 4. RDS(on ) Norm alize d to ID = 15A
V alue vs . Junction Te m pe rature
@ 125º C
6V
18
5.5V
15
12
9
5V
6
3
V GS = 10V
2.8
2.5
2.2
1.9
I D = 30A
1.6
I D = 15A
1.3
1
0.7
4.5V
0
0.4
0
2
4
6
8
10
V D S - V olts
12
14
16
18
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
ID = 15A V alue vs . Drain Curre nt
35
3
2.8
V GS = 10V
2.6
30
TJ = 125 º C
2.4
25
2.2
I D - Amperes
R D S ( o n ) - Normalized
3
2
1.8
1.6
20
15
10
1.4
1.2
TJ = 25 º C
5
1
0
0.8
0
5
10
15
20
25
30
35
I D - A mperes
© 2006 IXYS All rights reserved
40
45
50
55
60
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFH 30N60P IXFT 30N60P
IXFV 30N60P IXFV 30N60PS
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
35
50
45
30
40
- Siemens
15
10
TJ = 125 º C
5
-40 º C
25 º C
30
125 º C
25
fs
20
TJ = -40 º C
35
20
g
I D - Amperes
25
15
25 º C
10
5
0
0
3.5
4
4.5
5
5.5
6
6.5
7
0
5
10
15
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
10
80
9
60
V G S - Volts
I S - Amperes
70
50
40
TJ = 125 º C
30
35
40
V DS = 300V
8
I D = 15A
7
I G = 10m A
6
5
4
3
20
TJ = 25 º C
2
10
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
V S D - V olts
10
20
30
Q
G
40
50
60
70
80
90
- nanoCoulombs
Fig. 12. M axim um Tr ans ie nt The rm al
Re s is tance
Fig. 11. Capacitance
10000
1.00
f = 1MH z
C iss
R ( t h ) J C - ºC / W
Capacitance - picoFarads
25
Fig. 10. Gate Char ge
90
30
20
I D - A mperes
1000
C oss
100
0.10
C rs s
0.01
10
0
5
10
15
20
25
V D S - V olts
30
35
40
0.1
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_30N60P (7J) 12-05-05-B.xls
IXFH 30N60P IXFT 30N60P
IXFV 30N60P IXFV 30N60PS
Package Outline Drawings
TO-247 AD Outline
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
PLUS220 (IXFV) Outline
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXTT) Outline
© 2006 IXYS All rights reserved
PLUS220SMD (IXFV_S) Outline