PolarHVTM HiPerFET Power MOSFET IXFN32N80P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 29 250 A A IAR TC = 25°C 30 A EAR TC = 25°C 100 mJ EAS TC = 25°C 5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 625 W -55 ... +150 150 -55 ... +150 °C °C °C 300 2500 3000 °C V~ V~ TJ TJM Tstg TL VISOL 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Md Mounting torque Terminal connection torque 1.5 / 13 Nm/lb.in. 1.5 / 13 Nm/lb.in. Weight 30 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3 mA 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source RDS(on) VGS = 10 V, ID = 16A, Note 1 © 2006 IXYS All rights reserved V 5.0 V ±200 nA 25 2 μA mA 270 mΩ D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride l l l isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l TJ = 125°C = 800 V = 25 A ≤ 270 mΩ Ω ≤ 250 ns l l Easy to mount Space savings High power density DS99605E(08/06) IXFN32N80P Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 16A, Note 1 20 Ciss S 8820 nF 660 pF 22 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Coss 38 Crss td(on) 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 16A 29 ns td(off) RG = 2 Ω (External) 85 ns 26 ns 150 nC 39 nC 44 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 16 A Qgd 0.2 RthJC Source-Drain Diode °C/W °C/W 0.05 RthCS SOT-227B Outline Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 60 A ISM Repetitive 150 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/μs 250 ns QRM IRM VR = 100V 0.8 8.0 μC A Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFN32N80P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Char acte ris tics @ 25º C @ 25 º C 35 70 V GS = 10V V GS = 10V 30 60 6V 50 5V I D - Amperes I D - Amperes 25 7V 20 15 10 6V 40 5V 30 20 5 10 4V 4V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 V D S - V olts Fig. 3. Output Characte r is tics 35 25 30 3.1 V GS = 10V 30 V GS = 10V 2.8 R D S ( o n ) - Normalized 6V 5V 25 I D - Amperes 20 Fig. 4. RDS(on ) Norm alize d to ID = 16A V alue vs . Junction Te m pe r atur e @ 125º C 20 15 10 4V 5 2.5 2.2 1.9 I D = 32A 1.6 I D = 16A 1.3 1.0 0.7 0 0.4 0 3 6 9 12 15 18 21 24 -50 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r atur e ID = 16A V alue vs . Dr ain Cur re nt 2.8 30 2.6 V GS = 10V 27 TJ = 125 º C 2.4 24 2.2 21 I D - Amperes R D S ( o n ) - Normalized 15 V D S - V olts 2.0 1.8 1.6 18 15 12 9 1.4 6 1.2 TJ = 25 º C 1.0 3 0 0.8 0 10 20 30 40 I D - A mperes © 2006 IXYS All rights reserved 50 60 70 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFN32N80P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 45 70 40 60 35 - Siemens 25 TJ = 125 º C 25 º C 20 40 30 fs -40 º C 15 g I D - Amperes 50 30 TJ = -40 º C 20 25 º C 10 125 º C 10 5 0 0 3 3.5 4 4.5 0 5 5 10 15 V G S - V olts 25 30 35 40 45 Fig. 10. Gate Char ge 100 10 90 9 V DS = 400V 80 8 I D = 16A 70 7 I G = 10m A V G S - Volts I S - Amperes Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Drain V oltage 60 50 40 20 I D - A mperes TJ = 125 º C 30 6 5 4 3 TJ = 25 º C 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 V S D - V olts 60 Q G 80 100 120 140 160 - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The r m al Re s is tance Fig. 11. Capacitance 100000 1.00 C iss 10000 R ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MH z C oss 1000 0.10 0.01 100 C rs 10 0.00 0 5 10 15 20 25 30 35 40 V D S - V olts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_32N80P (9J) 8-23-06-D