Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 50 A IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C 38 A 200 A ICM = 80 A 400 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque, TO-264 Weight TO-264 PLUS247 Test Conditions IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 50 A, VGE = 15 V Note 1 © 2004 IXYS All rights reserved 10 6 g g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250 µA, VCE = VGE VGE(th) (TAB) G C E PLUS247 (IXGX) C G = Gate E = Emitter (TAB) E C = Collector Tab = Collector Features • Low on-state voltage IGBT and anti-parallel diode in one package • High current handling capability • MOS Gate turn-on for drive simplicity 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol TO-264 (IXGK) 3.0 TJ = 25°C TJ = 125°C 1.1 TJ = 125°C 5.0 V 600 5 µA mA ±100 nA 1.4 Applications • Lighting controls • Heating controls • AC/DC relays Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw or spring clip V V DS99275(12/04) IXGK 50N60A2D1 IXGX 50N60A2D1 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 55 S 3500 220 pF pF Cres 50 pF Qg Qge 140 23 nC nC 44 nC Cies Coes IC = 40 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 40 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Dim. 20 ns 25 ns IC = 50 A, VGE = 15 V 360 ns VCE = 480 V, RG = Roff = 5.0 Ω 250 ns Eoff 2.0 mJ td(on) tri Eon td(off) tfi Eoff 20 25 1.0 290 600 4.1 ns ns mJ ns ns mJ 0.15 0.31 K/W K/W tri Inductive load, TJ = 25°°C td(off) tfi TO-264 Outline Inductive load, TJ = 125°°C IC = 50 A, VGE = 15 V VCE = 480 V, RG = Roff = 5.0 Ω RthJC RthCK Reverse Diode (FRED) Symbol Test Conditions VF IF = 50 A, VGE = 0 V, Note 1 Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247 Outline Characteristic Values (TJ = 25∞C, unless otherwise specified) min. typ. max. TJ = 150°C RthJC 1.2 0.9 V V 0.65 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXGK 50N60A2D1 IXGX 50N60A2D1 © 2004 IXYS All rights reserved IXGK 50N60A2D1 IXGX 50N60A2D1 IXYS reserves the right to change limits, test conditions, and dimensions. IXGK 50N60A2D1 IXGX 50N60A2D1 © 2004 IXYS All rights reserved IXGK 50N60A2D1 IXGX 50N60A2D1 IXYS reserves the right to change limits, test conditions, and dimensions.