IXYS IXGX50N60A2D1

Advance Technical Data
IGBT with Diode
IXGK 50N60A2D1 VCES
IXGX 50N60A2D1 IC25
VCE(sat)
= 600 V
= 75 A
= 1.4 V
Low Saturation Voltage
Symbol
Test Conditions
Maximum Ratings
V CES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC110
TC = 110°C
50
A
IF110
TC = 110°C (50N60B2D1 Diode)
ICM
TC = 25°C, 1 ms
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
(RBSOA)
Clamped inductive load @ VCE ≤ 600 V
PC
TC = 25°C
38
A
200
A
ICM = 80
A
400
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque, TO-264
Weight
TO-264
PLUS247
Test Conditions
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 50 A, VGE = 15 V
Note 1
© 2004 IXYS All rights reserved
10
6
g
g
300
°C
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
= 250 µA, VCE = VGE
VGE(th)
(TAB)
G
C
E
PLUS247
(IXGX)
C
G = Gate
E = Emitter
(TAB)
E
C = Collector
Tab = Collector
Features
• Low on-state voltage IGBT and
anti-parallel diode in one package
• High current handling capability
• MOS Gate turn-on for drive simplicity
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
TO-264
(IXGK)
3.0
TJ = 25°C
TJ = 125°C
1.1
TJ = 125°C
5.0
V
600
5
µA
mA
±100
nA
1.4
Applications
• Lighting controls
• Heating controls
• AC/DC relays
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw or spring
clip
V
V
DS99275(12/04)
IXGK 50N60A2D1
IXGX 50N60A2D1
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
55
S
3500
220
pF
pF
Cres
50
pF
Qg
Qge
140
23
nC
nC
44
nC
Cies
Coes
IC = 40 A; VCE = 10 V,
Note 1
40
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Dim.
20
ns
25
ns
IC = 50 A, VGE = 15 V
360
ns
VCE = 480 V, RG = Roff = 5.0 Ω
250
ns
Eoff
2.0
mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
20
25
1.0
290
600
4.1
ns
ns
mJ
ns
ns
mJ
0.15
0.31 K/W
K/W
tri
Inductive load, TJ = 25°°C
td(off)
tfi
TO-264 Outline
Inductive load, TJ = 125°°C
IC = 50 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5.0 Ω
RthJC
RthCK
Reverse Diode (FRED)
Symbol
Test Conditions
VF
IF = 50 A, VGE = 0 V,
Note 1
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247 Outline
Characteristic Values
(TJ = 25∞C, unless otherwise specified)
min. typ. max.
TJ = 150°C
RthJC
1.2
0.9
V
V
0.65 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXGK 50N60A2D1
IXGX 50N60A2D1
© 2004 IXYS All rights reserved
IXGK 50N60A2D1
IXGX 50N60A2D1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK 50N60A2D1
IXGX 50N60A2D1
© 2004 IXYS All rights reserved
IXGK 50N60A2D1
IXGX 50N60A2D1
IXYS reserves the right to change limits, test conditions, and dimensions.