JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR (NPN) TO—126 FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic=5mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 1 µA Emitter cut-off current IEBO VEB=3V, IC=0 1 µA hFE(1) VCE=2V, IC=20mA 100 hFE(2) VCE=2V, IC=1A 100 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB=200mA 2 V fT VCE=5V, IC=100mA 80 MHz Cob VCB=10V, IE=0, f=1MHz 45 pF DC current gain Transition frequency Collector output capacitance 400 Typical Characteristics 2SD886