JMNIC 2SB885

JMnic
Product Specification
2SB885
Silicon PNP Power Transistor
DESCRIPTION
・With TO-220C package
・DARLINGTON
・High DC durrent gain
・Low collector saturation voltage
・Complement to type 2SD1195
APPLICATIONS
・For motor drivers,printer hammer
drivers,relay drivers,voltage regulator
control applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-110
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current-DC
-5
A
ICM
Collector current-Pulse
-8
A
PC
Collector power dissipation
TC=25℃
35
Ta=25℃
1.75
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB885
Silicon PNP Power Transistor
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA, RBE=∞
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA, IE=0
-110
V
VCEsat
Collector-emitter saturation voltage
IC=-2.5A ,IB=-5mA
-1.5
V
VBE sat
Base-emitter saturation voltage
IC=-2.5A ,IB=-5mA
-2.0
V
ICBO
Collector cut-off current
VCB=-80V, IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3.0
mA
hFE
DC current gain
IC=-2.5A ; VCE=-3V
Transition frequency
VCE=-5V, IC=-2.5A
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
1500
20
MHz
0.7
μs
1.3
μs
1.5
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
Turn-off time
IC=-2A ; VCC=-50V
IB1=-IB2=-4mA;RL=25Ω
2
JMnic
Product Specification
2SB885
Silicon PNP Power Transistor
PACKAGE OUTLINE
Fig.2 Outline dimensions
3