SEMICONDUCTOR KDS114E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Low Series Resistance : rS=0.5 (Typ.). 1 A Small Total Capacitance : CT=1.2pF(Max.). E C B CATHODE MARK Small Package. 2 D MAXIMUM RATING (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 35 V Forward Current IF 100 mA Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range F ) DIM A B C D E F 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC Marking Type Name UD ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=2mA - - 0.85 V Reverse Current IR VR=15V - - 0.1 A Reverse Voltage VR IR=1 A 35 - - V Total Capacitance CT VR=6V, f=1MHz - 0.7 1.2 pF Series Resistance rs IF=2mA, f=100MHz - 0.5 0.9 2004. 1. 29 Revision No : 1 1/2 KDS114E rS - IF 10 Ta=25 C f=100MHz TOTAL CAPACITANCE C T (pF) SERIES RESISTANCE r S (Ω) 3 C T - VR 1 0.5 0.3 5 3 1 0.5 0.3 0.1 1 3 10 30 100 FORWARD CURRENT I F (mA) Ta=25 C f=100MHz 1 3 5 10 30 50 100 REVERSE VOLTAGE V R (V) FORWARD CURRENT I F (A) I F - VF 10 -1 10 -2 10 -3 10 -4 Ta=25 C 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 FORWARD VOLTAGE V F (V) 2004. 1. 29 Revision No : 1 2/2