SEMICONDUCTOR KDS115 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES E ・Small Package. B M M ・Small Total Capacitance : CT=1.2pF(Max.). ・Low Series Resistance : rS=0.6Ω(Typ.). D J 3 1 G A 2 B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + D E 0.3+0.10/-0.05 _ 0.20 2.10 + G H 0.65 0.15+0.1/-0.06 J K RATING UNIT Reverse Voltage VR 30 V Forward Current IF 50 mA Junction Temperature Tj 125 ℃ Tstg -55～125 ℃ H L SYMBOL C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC DIM A N N K 1.30 0.00-0.10 0.70 _ 0.10 0.42 + L M N 0.10 MIN 3 1. CATHODE 1 2. ANODE 2 Storage Temperature Range 3. ANODE1/ CATHODE 2 2 1 USM Marking Lot No. R3 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=2mA - - 0.85 V Reverse Current IR VR=15V - - 0.1 μA Reverse Voltage VR IR=1μA 30 - - V Total Capacitance CT VR=6V, f=1MHz - 0.8 1.2 pF Series Resistance rs IF=2mA, f=100MHz - 0.6 0.9 Ω 2008. 9. 8 Revision No : 2 1/2 KDS115 rs - I F CT - VR 3 Ta=25 C f=100MHz TOTAL CAPACITANCE CT (pF) SERIES RESISTANCE r s (Ω) 3 1 0.5 0.3 Ta=25 C f=1MHz 1 0.5 0.3 1 3 5 10 20 FORWARD CURRENT I F (mA) 1 3 5 10 20 REVERSE VOLTAGE VR (V) I F - VF FORWARD CURRENT I F (A) 10 10 10 10 -1 Ta=25 C -2 -3 -4 0 0.4 0.8 1.2 1.6 2.0 2.4 FORWARD VOLTAGE V F (V) 2008. 9. 8 Revision No : 2 2/2