KEC KF13N50P_10

SEMICONDUCTOR
KF13N50P/F
TECHNICAL DATA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KF13N50P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
・VDSS= 500V, ID= 13A
・Drain-Source ON Resistance :
RDS(ON)=0.44Ω(Max) @VGS = 10V
・Qg(typ.) = 35nC
MAXIMUM RATING (Tc=25℃)
RATING
CHARACTERISTIC
SYMBOL
UNIT
KF13N50P
KF13N50F
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
@TC=25℃
Drain Current
@TC=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
ID
IDP
8
8*
40
40*
A
KF13N50F
860
mJ
EAR
19.5
mJ
dv/dt
4.5
V/ns
Derate above 25℃
Storage Temperature Range
13*
EAS
PD
Maximum Junction Temperature
13
208
49.8
W
1.66
0.4
W/℃
Tj
150
℃
Tstg
-55~150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
0.6
2.51
℃/W
Thermal Resistance, Junction-toAmbient
RthJA
62.5
62.5
℃/W
* : Drain current limited by maximum junction temperature.
EQUIVALENT CIRCUIT
2010. 8. 16
Revision No : 2
1/7
KF13N50P/F
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
500
-
-
V
ID=250μA, Referenced to 25℃
-
0.63
-
V/℃
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
BVDSS
ΔBVDSS/ΔTj
ID=250μA, VGS=0V
Drain Cut-off Current
IDSS
VDS=500V, VGS=0V,
-
-
10
μA
Gate Threshold Voltage
Vth
VDS=VGS, ID=250μA
2.5
-
4.5
V
Gate Leakage Current
IGSS
VGS=±30V, VDS=0V
-
-
±100
nA
VGS=10V, ID=6.5A
-
0.35
0.44
Ω
-
35
-
-
9
-
-
13
-
-
28
-
-
45
-
-
105
-
RDS(ON)
Drain-Source ON Resistance
Dynamic
Qg
Total Gate Charge
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay time
td(on)
tr
Turn-on Rise time
td(off)
Turn-off Delay time
VDS=400V, ID=13A
VGS=10V
(Note4,5)
VDD=250V
ID=13A
RG=25Ω
nC
ns
(Note4,5)
Turn-off Fall time
tf
-
55
-
Input Capacitance
Ciss
-
1700
-
Output Capacitance
Coss
-
210
-
Reverse Transfer Capacitance
Crss
-
15
-
-
-
13
-
-
52
VDS=25V, VGS=0V, f=1.0MHz
pF
Source-Drain Diode Ratings
Continuous Source Current
IS
Pulsed Source Current
ISP
Diode Forward Voltage
VSD
IS=13A, VGS=0V
-
-
1.4
V
Reverse Recovery Time
trr
IS=13A, VGS=0V,
-
360
-
ns
Reverse Recovery Charge
Qrr
dIs/dt=100A/μs
-
4.4
-
μC
VGS<Vth
A
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=6.0mH, IS=13A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤13A, dI/dt≤200A/μs, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300μs, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
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Revision No : 2
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KF13N50P/F
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Revision No : 2
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Revision No : 2
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Revision No : 2
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Revision No : 2
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Revision No : 2
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