SEMICONDUCTOR KF7N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. DIM FEATURES ・VDSS(Min.)= 500V, ID= 7A ・RDS(ON)=1.0 Ω(Max) @VGS =10V ・Qg(typ.) =16nC MAXIMUM RATING (Tc=25℃) CHARACTERISTIC SYMBOL RATING KF7N50P KF7N50F UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ ID IDP 4.4 4.4* 21 21* KF7N50F A 180 mJ EAR 4 mJ dv/dt 4.5 V/ns Derate above25℃ Storage Temperature Range 7* EAS PD Maximum Junction Temperature 7 100 41.7 W 0.8 0.33 W/℃ Tj 150 ℃ Tstg -55～150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.25 3.0 ℃/W Thermal Resistance, Junction-toAmbient RthJA 62.5 62.5 ℃/W * : Drain current limited by maximum junction temperature. PIN CONNECTION 2011. 6. 23 Revision No : 0 1/2 KF7N50P/F ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 500 - - V ID=250μA, Referenced to 25℃ - 0.5 - V/℃ Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=3.5A - 0.83 1.0 Ω - 16 - - 3.5 - - 6.0 - - 20 - - 25 - - 50 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=400V, ID=7A VGS=10V (Note4,5) VDD=200V, ID=7A RG=25Ω (Note4,5) VGS=10V ns Turn-off Fall time tf - 25 - Input Capacitance Ciss - 710 - Output Capacitance Coss - 95 - Reverse Transfer Capacitance Crss - 8.5 - - - 7 - - 28 VDS=25V, VGS=0V, f=1.0MHz nC pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=7A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=7A, VGS=0V, - 310 - ns Reverse Recovery Charge Qrr dIs/dt=100A/μs - 2.7 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 7.0mH, IS=7A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤7A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 2011. 6. 23 Revision No : 0 2/2 KF7N50P/F 2011. 6. 23 Revision No : 0 3/7 KF7N50P/F 2011. 6. 23 Revision No : 0 4/7 KF7N50P/F 2011. 6. 23 Revision No : 0 5/7 KF7N50P/F 2011. 6. 23 Revision No : 0 6/7 KF7N50P/F 2011. 6. 23 Revision No : 0 7/7