Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC2946 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 ìs +0.2 9.70 -0.2 High speed tf +0.15 0.50 -0.15 High Votage VCEO=200V 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 330 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 7 V Collector current ICP 2 A Collector peak current *1 IC 4 A PT 2 W Total Power dissipation Ta = 25 *2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 PW 10ms, Duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm2X0.7mm www.kexin.com.cn 1 Transistors SMD Type 2SC2946 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit collector cutoff current ICBO VCB=250V,IE=0 1 ìA emitter cutoff current IEBO VEB=5V,IC=0 1 ìA DC current Gain * hFE VCE=5V,IC=100mA 20 VCE=5V,IC=1A 15 60 160 Collector Saturation Voltage * VCE(sat) IC=1A,IB=0.1A 1 V Base Satruation Voltage * VBE(sat) IC=1A,IB=0.1A 1.5 V Turn-on Time ton Storage Time tstg Fall Time * Pulsed:PW 1 see Test circuit tf 350ìs,Duty Cycle 2% hFE Classification Marking N M L K hFE 20 to 50 30 to 70 50 to 100 80 to 160 www.kexin.com.cn 2 1 Switching Time(ton,tstg,tr) Test Circuit 2 Min ìs