KEXIN 2SC3734

Transistors
IC
SMD Type
NPN Silicon Epitaxia
2SC3734
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
200ns.
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
High speed : tstg
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6
V
IC
200
mA
PT
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Collector current
Total power dissipation
at 25
ambient temperature
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 30V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB = 3V, IC=0
100
nA
DC current gain *
hFE
VCE = 1V , IC = 10mA
75
200
300
Collector-emitter saturation voltage *
VCE(sat) IC = 50mA , IB = 5mA
0.12
0.3
V
Base-emitter saturation voltage *
VBE(sat) IC = 50mA , IB = 5mA
0.8
0.95
V
Gain bandwidth product
fT
VCE = 20V , IE = -10mA
Output capacitance
Cob
VCB = 5V , IE = 0 , f = 1.0MHz
Turn-on time
ton
VCC = 3V ,
Storage time
tstg
IC = 10mA ,
Turn-off time
toff
IB1 = -IB2 = 1mA
*. PW
300
510
3.0
100
MHz
4.0
pF
70
ns
200
ns
250
ns
350ìs,duty cycle 2%
hFE Classification
Marking
B22
hFE
75 150
B23
100
200
B24
150
300
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