Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 15 V Collector current IC 2 A Collector current (pulse) ICP 4 A Base current IB 0.4 A Collector dissipation PC 500 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC4390 Electrical Characteristics Ta = 25 Parameter Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 15V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 10V, IC=0 0.1 ìA DC current gain hFE VCE =2V , IC = 500mA fT VCE = 10V , IC = 50mA 260 MHz Cob VCB = 10V , f = 1.0MHz 280 pF Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage 800 VCE(sat) IC = 1 A , IB = 20mA VBE(sat) IC = 1 A , IB = 20mA 1500 3200 0.11 0.5 V 0.87 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 20 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 10 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 15 V Turn-on time ton 0.13 ìs Storage time tstg 0.8 ìs tf 0.1 ìs Fall time 2 Symbol www.kexin.com.cn