Transistors IC SMD Type TrenchMOSTM transistor Standard level FET KUK7605-30A 1 .2 7 -0+ 0.1.1 TO-263 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 0.1max +0.1 1.27-0.1 1 5 .2 5 -0+ 0.2.2 5 .6 0 +0.1 1.27-0.1 8 .7 -0+ 0.2.2 Features Unit: mm +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage RGS = 20 KÙ Symbol Rating Unit VDS 30 V VDGR 30 V Gate-source voltage VGS Drain current (DC) Tmb = 25 ID V 75 A Drain current (DC) Tmb = 100 ID 75 A Drain current (pulse peak value) Tmb = 25 IDM 400 A Total power dissipation Tmb = 25 Ptot 230 W Storage & operating temperature Tstg, Tj -55 to 175 Thermal resistance junction to mounting base Rth j-mb 0.65 K/W Thermal resistance junction to ambient Rth j-a 50 K/W www.kexin.com.cn 1 Transistors IC SMD Type KUK7605-30A Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min Typ ID = 0.25 mA; VGS = 0 V;Tj = 25 30 V ID = 0.25 mA; VGS = 0 V;Tj = -55 27 V ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 3 IDSS gate-source leakage current IGSS VDS = 30 V; VGS = 0 V;Tj = 25 0.05 drain-source on-state resistance RDSon 20 V; VDS = 0 V VGS = 10 V; ID = 25 A;Tj = 25 4.4 V 10 ìA 500 ìA 100 nA 4.3 5 mÙ 9.3 mÙ 4500 6000 pF 1500 1800 pF 960 1300 pF VGS = 10 V; ID = 25 A;Tj = 175 input capacitance Ciss output capacitance Coss reverse transfer capacitance Crss turn-on delay time td(on) 35 55 ns tr 130 200 ns 155 230 ns 150 220 ns rise time turn-off delay time fall time VGS = 0 V; VDS = 25 V;f = 1 MHz VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù td(off) tf internal drain inductance Ld from drain lead 6 mm from package to centre of die internal source inductance Ls Measured from source lead soldering point to source bond pad Continuous reverse drain current 2.5 nH 7.5 nH IDR 75 A Pulsed reverse drain current IDRM 240 A source-drain (diode forward) voltage VSD 1.2 V IF = 25 A; VGS = 0 V 0.85 I = 75 A; V = 0 V 1.1 V reverse recovery time trr IS = 75 A; -dIF/dt = 100 A/ìs; 400 ns recovered charge Qr VGS = -10 V; VDS = 30 V 1.0 ìC Drain-source non-repetitive unclamped inductive turn-off energy 2 V 2 VDS = 30 V; VGS = 0 V;Tj = 175 VGS = 4 Unit V ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max www.kexin.com.cn W DSS ID=75A;VDD 25V;VGS=10V;RGS=50Ù;Tmb=25 500 mJ