KEXIN KUK7575-100A

Transistors
IC
SMD Type
TrenchMOSTM standard level FET
KUK7575-100A
TO-263
TrenchMOS
TM
1 .2 7 -0+ 0.1.1
Features
technology
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Standard level compatible.
2 .5 4 -0+ 0.2.2
rated
8 .7 -0+ 0.2.2
175
5 .6 0
Q101 compliant
+0.1
5.08-0.1
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
100
V
drain-gate voltage (DC) RGS = 20 kÙ
VDGR
100
V
gate-source voltage (DC)
VGS
20
V
drain-source voltage (DC)
drain current (DC) Tmb = 25 ; VGS = 10 V
ID
23
A
16.2
A
peak drain current *1
IDM
92
A
total power dissipation Tmb = 25
Ptot
99
W
storage temperature
Tstg
-55 to 175
Tj
-55 to 175
drain current (DC) Tmb = 100 ; VGS = 10 V
operating junction temperature
reverse drain current (DC) Tmb = 25
IDR
23
A
pulsed reverse drain current *2
IDRM
92
A
non-repetitive avalanche energy
W DSS
100
mJ
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
*1 Tmb = 25 ; pulsed; tp
Rth(j-a)
50
K/W
Rth(j-mb)
1.5
K/W
10 ìs;
*2 unclamped inductive load; ID = 14 A;VDS
100 V; VGS = 10 V; RGS = 50Ù,starting Tmb= 25
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1
Transistors
IC
SMD Type
KUK7575-100A
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Symbol
V(BR)DSS
VGS(th)
Testconditons
Min
Typ
IDSS
gate-source leakage current
IGSS
V
ID = 0.25 mA; VGS = 0 V;Tj = -55
89
V
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
3
VDS = 100 V; VGS = 0 V;Tj = 25
RDSon
VGS =
20 V; VDS = 0 V
VGS = 10 V; ID = 13 A;Tj = 25
0.05
Ciss
output capacitance
Coss
reverse transfer capacitance
Crss
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain (diode forward) voltage
2
V
4.4
V
10
mA
500
mA
2
100
nA
64
75
m
187
m
VGS = 10 V; ID = 13 A;Tj = 175
input capacitance
4
V
VDS = 100 V; VGS = 0 V;Tj = 175
drain-source on-state resistance
Unit
100
ID = 1 mA; VDS = VGS;Tj = -55
drain-source leakage current
Max
ID = 0.25 mA; VGS = 0 V;Tj = 25
907
pF
127
pF
78
pF
td(on)
8
ns
tr
39
ns
26
ns
VGS = 0 V; VDS = 25 V;f = 1 MHz
VDD = 30 V; RL = 2.2Ù;VGS = 10 V; RG = 5.6Ù
td(off)
tf
Ld
Ls
VSD
from drain lead 6 mm from package to centre of die
24
ns
4.5
nH
2.5
nH
from source lead to source bond pad
7.5
IS = 25 A; VGS = 0 V;
0.85
nH
1.2
V
reverse recovery time
trr
IS = 13 A;dIS/dt = -100 A/ìs
64
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
120
nC
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