KEXIN KUK7606-55A

Transistors
IC
SMD Type
TrenchMOSTM standard level FET
KUK7606-55A
TO-263
TrenchMOS
TM
1 .2 7 -0+ 0.1.1
Features
technology
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Standard level compatible.
2 .5 4 -0+ 0.2.2
rated
8 .7 -0+ 0.2.2
175
5 .6 0
Q101 compliant
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
30
V
Drain-gate voltage RGS = 20 KÙ
VDGR
30
V
Gate-source voltage
VGS
Drain-source voltage
V
Drain current (DC) Tmb = 25
ID
75
A
Drain current (DC) Tmb = 100
ID
75
A
Drain current (pulse peak value) Tmb = 25
IDM
400
A
W
Total power dissipation Tmb = 25
Ptot
230
Storage & operating temperature
Tstg, Tj
-55 to 175
154
A
75
A
616
A
reverse drain current (DC) Tmb = 25
IDR
pulsed reverse drain current
IDRM
non-repetitive avalanche energy
W DSS
1.1
J
Thermal resistance junction to mounting base
Rth j-mb
0.65
K/W
Thermal resistance junction to ambient
Rth j-a
50
K/W
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1
Transistors
IC
SMD Type
KUK7606-55A
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Symbol
V(BR)DSS
VGS(th)
Testconditons
Min
Typ
IDSS
gate-source leakage current
IGSS
30
V
ID = 0.25 mA; VGS = 0 V;Tj = -55
27
V
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
3
VDS = 30 V; VGS = 0 V;Tj = 25
RDSon
VGS =
20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;Tj = 25
0.05
V
4.4
V
10
ìA
500
ìA
2
100
nA
4.3
5
mÙ
9.3
mÙ
4500
6000
pF
1500
1800
pF
960
1300
pF
VGS = 10 V; ID = 25 A;Tj = 175
input capacitance
Ciss
output capacitance
Coss
reverse transfer capacitance
Crss
turn-on delay time
td(on)
35
55
ns
tr
130
200
ns
155
230
ns
150
220
ns
rise time
turn-off delay time
fall time
VGS = 0 V; VDS = 25 V;f = 1 MHz
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù
td(off)
tf
internal drain inductance
Ld
from drain lead 6 mm from package to centre
of die
internal source inductance
Ls
Measured from source lead soldering point to
source bond pad
2.5
nH
7.5
nH
Continuous reverse drain current
IDR
75
A
Pulsed reverse drain current
IDRM
240
A
source-drain (diode forward) voltage
VSD
1.2
V
IF = 25 A; VGS = 0 V
0.85
I = 75 A; V = 0 V
1.1
V
reverse recovery time
trr
IS = 75 A; -dIF/dt = 100 A/ìs;
400
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
1.0
ìC
Drain-source non-repetitive unclamped
inductive turn-off energy
2
4
V
VDS = 30 V; VGS = 0 V;Tj = 175
drain-source on-state resistance
Unit
ID = 0.25 mA; VGS = 0 V;Tj = 25
ID = 1 mA; VDS = VGS;Tj = -55
Zero gate voltage drain current
Max
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W DSS
ID=75A;VDD 25V;VGS=10V;RGS=50Ù;Tmb=25
500
mJ