MTPT200 SEMICONDUCTOR RoHS RoHS Nell High Power Products Three-Phase Bridge + Thyristor, 200A MTPT20008 Thru MTPT20016 108 93 13.5 20 22 22 + - M4 4 R2 - 6.2 41 48 S T 28 22 22 6-M6 27 R 1 8.5 26 12 22 62 G All dimensions in millimeters FEATURES UL recognition file number E320098 Three-phase bridge and a thyristor G R2 - + High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V Applications lnverter for AC or DC motor control Current stablilzed power supply Switching power supply PRIMARY CHARACTERRISTICS ADVANTAGE International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Small thermal resistance Weight: 470g (16.6 ozs) Page 1 of 5 IF(AV) 200A V RRM 800V to 1600V I FSM 1900A IR 20 µA V FM / V TM 1.3V T J max. 150ºC MTPT200 SEMICONDUCTOR RoHS RoHS Nell High Power Products Maximum Ratings for Diodes MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) MTPT200 SYMBOL PARAMETER Maximum repetitive peak reverse voltage UNIT 08 12 16 V RRM / V RRM 800 1200 1600 V V RSM 900 1300 1700 V Peak reverse non-repetitive voltage IO 200 A I FSM 1900 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 18050 A 2s Operating junction temperature range TJ -40 to 150 ºC T STG -40 to 125 ºC Output DC current three-phase full wave, T c = 100°C Peak forward surge current single sine-wave superimposed on rated load Storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TEST CONDITIONS SYMBOL Maximum instantaneous forward drop per diode I F = 200A VF Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diod T A = 150°C PARAMETER MTPT200 08 IR UNIT 16 12 1.3 V 20 µA 10 mA Maximum Ratings fo Thyristor FORWARD CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum peak, one-cycle, on-state non-repetitive surge current ITSM TEST CONDITIONS 180° conduction, half sine wave ,50Hz I 2t A 85 °C 1900 t = 8.3 ms 1995 No voltage reapplied t = 8.3 ms t = 10 ms t = 8.3 ms Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied UNITS 200 t = 10 ms t = 10 ms Maximum I 2t for fusing VALUES A 18 16.4 kA2s 12.6 11.5 Maximum I 2√t for fusing 2 I √t t = 0.1 ms to 10 ms, no voltage reapplied 180.5 kA2√s Maximum on-state voltage drop VTM ITM = 200A , TJ = 25 °C, 180° conduction 1.3 V IH Anode supply = 12 V initial I T = 30 A, TJ = 25 °C 200 IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 °C 400 Maximum holding current Maximum latching current mA SWITCHING PARAMETER SYMBOL Typical delay time td Typical rise time tr TEST CONDITIONS VALUES TJ = 25 °C ,gate current = 1A dlg/dt = 1 A/µs 1 V d = 0.67 % V DRM 2 UNITS μs Typical tum-off time tq ITM = 300A ; dl/dt = 15 A/µs ; TJ = TJ maximum, VR = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω Page 2 of 5 50 to 150 MTPT200 SEMICONDUCTOR RoHS RoHS Nell High Power Products BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 30 mA 50 Hz, circuit to base, all terminals shorted, 25 ºC ,60s 3000 V TJ = TJ maximum, exponential to 67 % rated VDRM 500 V/μs VALUES UNITS Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C RMS isolation Voltage VISO Critical rate of rise of off-state voltage dV/dt TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger TEST CONDITIONS PGM t p ≤ 5 ms, TJ = TJ maximum 15 PG(AV) f = 50 Hz, TJ = TJ maximum 5 IGM - VGT 3 t p ≤ 5 ms, TJ = TJ maximum W A 10 V VGT 3 Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 °C I GT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 100 mA 0.25 V 10 mA 200 A/μs VALUES UNITS - 40 to 125 °C TJ = TJ maximum, 67% V DRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS junction operating and storage temperature range TJ, Tstg Maximum thermal resistance, junction to case per junction RthJC DC operation Typical thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased Mounting torque ± 10 % 0.14 °C/W A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. to heatsink, M6 to terminal, M6/M4 0.06 5 N.m 5/2 470 g 16.6 oz. Approximate weight Device code MTPT 200 1 2 16 3 1 - Module type : “MTPT” for 3Ø Bridge + Thyristor 2 - I F(AV) rating : "200" for 200 A 3 - Voltage code : code x 100 = VRRM Page 3 of 5 MTPT200 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Power dissipation 550 Fig.2 Forward current derating curve 250 Three phase 500 Three phase A W 200 400 150 300 100 200 50 100 ID Pvtot 0 0 ID 40 80 120 160 A 0 200 Fig.3 Transient thermal impedance Tc 0 50 100 °C 150 Fig.4 Max non-repetitive forward surge current 2500 0.20 50HZ A °C/ W 2000 1500 Zth(j-C) Per one element 0.10 1000 500 Single phase half wave Tj=25 °C start 0 0 0.001 t 0.01 0.1 1.0 10 S cycles 10 1 100 Fig.5 Forward characteristics 100 Fig.6 SCR power dissipation 1000 250 max. W A 200 150 100 100 50 IF Tj=25 °C PTAV 10 0 0.5 VF 1.0 1.5 2.0 V 2.5 Page 4 of5 0 ID 40 80 120 160 A 200 RoHS RoHS MTPT200 SEMICONDUCTOR Nell High Power Products Fig.7 SCR forward current derating curve Fig.8 SCR transient thermal impedance 250 0.20 A ℃/ W 200 Zth(j-C) 150 0.10 100 50 ITAVM 0 0 50 0 Tc ℃ 100 150 0.001 t Fig.9 SCR forward characteristics 1000 0.01 0.1 1.0 10 S 100 Fig.10 Gate trigger characteristics 102 max. max. A V Av e 100 Pe ak ra ge G at e Po G w er at e Po we r (3 W ) 100 -10°C (1 0 W ) Peak Gate Current (3A) Peak Forward Gate Voltage (10V) 101 135°C IT VG Tj=25 °C 10 25°C Maximum Gate Non-Trigger Voltage 0.1 0.5 VTM 1.0 1.5 2.0 V 2.5 Page 5 of 5 101 I G 102 103 104