RoHS RoHS N-HFA15PB120 SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 15 A FEATURES Ultrafast and ultrasoft recovery Very low I RRM and Q rr Compliant to RoHS Designed and qualified for industrial level BENEFITS TO-247 AC modified Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count common cathode 2 DESCRIPTION HFA15PB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200V and 15 A continuous current,the HFA15PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA15PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 3 Anode 1 Cathode PRODUCT SUMMARY Package TO-247AC modified (2 pins) l F(AV) 15A VR 1200 V V F at l F, at 25°C 3.0 V trr (typ.) 30 ns T J max. 150ºC Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL IF Single pulse forward current l FSM Maximum repetitive forward current l FRM Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com TEST CONDITIONS VR PD T J , T Stg Page 1 of 5 Tc = 120 ºC VALUES UNITS 600 V 15 140 A 60 Tc = 25 ºC 75 Tc = 100 ºC 30 - 55 to + 150 W ºC N-HFA15PB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage Maximum forward voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR VFM TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 15 A - 2.5 3.0 IF = 30 A - 3.0 - IF = 15 A, TJ = 125 ºC - 2.3 - V R = V R rated - 1 20 T J = 125°C, V R = V R rated - - 500 IR = 100 µA UNITS V Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 17 - pF Series inductance LS Measured lead to lead 5 mm from package body - 12 - nH MAX. UNITS DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS MIN. TYP. I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) - 28 33 IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C - 30 - trr1 TJ = 25 ºC - 240 60 trr2 TJ = 125 ºC - 290 120 trr IRRM1 IF= 15A dIF/dt = -200 A/µs VR = 800 V TJ = 25 ºC ns - 3 6.0 - 6 10 TJ = 25 ºC - 260 180 Qrr2 TJ = 125 ºC - 960 600 dl(rec)M/dt1 TJ = 25 ºC - 120 - TJ = 125 ºC - 76 - IRRM2 TJ = 125 ºC Qrr1 dl(rec)M/dt2 µA A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063'' from case (1.6 mm) for 10 s MIN. TYP. - - MAX. 300 - - 1.20 - - 41 UNITS °C RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 41 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.26 - - 6.0 - - 0.21 - oz. - 12 (10) kgf . cm (lbf . in) Weight 6.0 (5.0) Mounting torque Marking device www.nellsemi.com Case style TO-247AC (JEDEC) Page 2 of 5 HFA15PA120 g N-HFA15PB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.20 thermal impedance- Z θJC (°C/W) D = 0.9 1.00 0.7 0.80 0.5 0.60 0.40 P DM Note: 0.3 t1 t2 0.20 SINGLE PULSE 0.1 Duty Factor D = t 1 /t 2 Peak T J = P DM x Z θJC + T C 0.05 0 10-5 10-4 10-3 10-2 10-1 1 Rectangular pulse duration (seconds) Fig3. Reverse recovery time vs. current rate of change Fig.2 Forward current vs. forward voltage 60 Reverse recovery time-t rr (ns) 400 50 T J = 125°C 40 T J = 25°C 30 T J = -55°C 20 10 Reverse recovery charge-Q rr (nC) 0 0 1 3 2 4 T J = 125°C V R = 800V 350 30A 300 250 15A 7.5A 200 150 100 50 0 0 5 200 400 600 800 1000 1200 Anode-to-cathode voltage-V F (V) Current rate of change-di F /dt(A/µs) Fig.4 Reverse recovery charge vs. current rate of change Fig.5 Reverse recovery current vs. current rate of change 2500 T J = 125°C V R = 800V 30A 2000 1500 15A 1000 7.5A 500 0 0 200 400 600 800 1000 1200 Current rate of change-di F /dt(A/µs) www.nellsemi.com Page 3 of 5 Reverse recovery current-l RRM (A) Forward current-l F (A) T J = 175°C 25 T J = 125°C 30A V R = 800V 20 15 15A 10 7.5A 5 0 0 200 400 600 800 1000 1200 Current rate of change-di F /dt(A/µs) RoHS RoHS N-HFA15PB120 SEMICONDUCTOR Nell High Power Products Fig.7 Maximum average forward current vs. case temperature Fig6. Dynamic parameters vs. junction temperature 1.2 35 Qrr Duty cycle = 0.5 T J =175°C 30 1.0 IRRM trr 0.8 25 l F(AV) (A) (Normalized to 1000A/µs) Dynamic parameters, K f trr 0.6 Qrr 0.4 20 15 10 0.2 5 0.0 0 25 50 75 100 125 0 25 150 75 50 Junction temperature (°C),T J 100 125 Case temperature (°C) Fig.8 Junction capacitance vs. reverse voltage Fig.9 Reverse recovery parameter test circuit 80 VR = 200 V 60 0.01Ω 50 L = 70 µH D.U.T. 40 (pF) Junction capacitance, C J 70 30 dIF /dt adjust 20 D IRFP250 G S 10 0 1 10 100 200 reverse voltage (V), V R Fig.10 Reverse recovery waveform and definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. www.nellsemi.com 150 Page 4 of 5 (4) Qrr - area under curve defined by trr and IRRM Qrr = t rrx l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr 175 N-HFA15PB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code - N HFA 15 2 3 1 www.nellsemi.com PB 120 4 5 1 - Nell Semiconductors product 2 - FRED family 3 - Current rating (15 =15A) 4 - PB = TO-247AC modified 5 - Voltage rating: (120 = 1200 V) Page 5 of 5