RoHS N-30ETU06 RoHS SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 30 A Available RoHS* COMPLIANT FEATURES Ultrafast recovery Ultrasoft recovery Ver low lRRM Ver low Qrr Compliant to RoHS Designed and qualified for industrial level N-30ETU06 N-30ATU06 Base cathode 2 Base cathode 2 BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 1 Cathode 30ETU06 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600V and 30 A continuous current, the 30ETU06 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED 30ETU06 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Anode 3 Anode TO-220AC 3 Anode TO-220AB PRODUCT SUMMARY VR 600 V VF at 30A at 25 °C 1.8 V IF(AV) 30 A trr (typical) 23 ns TJ (maximum) 150 °C Qrr 55 nC dI(rec)M/dt 260 A/μs ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR VALUES UNITS 600 V IF TC= 116 ºC Single pulse forward current IFSM TC= 25 ºC 300 Maximum repetitive forward current IFRM TC= 25 ºC 145 TC= 100 ºC 57 Maximum continuous forward current Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com PD 30 A 110 TJ, TStg Page 1 of 6 - 55 to 150 W ºC RoHS N-30ETU06 RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR TEST CONDITIONS MIN. TYP. MAX. 600 - - - 1.40 1.80 IF = 60 A - 1.70 2.0 IF = 30 A, TJ = 125 ºC - 1.10 1.35 V R = V R rated - - T J = 150°C, V R = V R rated - - 10 1000 - pF - nH UNITS IR = 100 µA IF = 30 A Maximum forward voltage VFM Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 35 Series inductance LS Measured lead to lead 5 mm from package body - 8 DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb TEST CONDITIONS MIN. TYP. MAX. - 30 35 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 23 - trr1 TJ = 25 ºC - 30 60 trr2 TJ = 125 ºC - 175 125 µA IRRM1 TJ = 25 ºC - 3 6.0 - 6 10 - 55 180 - 485 600 IF= 30A dIF/dt = -200 A/µs VR = 400 V ns IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC Qrr2 TJ = 125 ºC dl(rec)M/dt1 TJ = 25 ºC - 260 - TJ = 125 ºC - 160 - dl(rec)M/dt2 V (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr UNITS A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS - - 300 °C - 0.5 0.8 Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and gerased - 0.4 - - 0.063" from case (1.6 mm) for 10 s Weight Mounting torque Marking device www.nellsemi.com 2 - g - 0.07 - oz. 6 (5) - 12 (10) kgf . cm (lbf . in) Case style TO-220AC 30ETU06 Case style TO-220AB 30ATU06 Page 2 of 6 K/W RoHS N-30ETU06 RoHS SEMICONDUCTOR Nell High Power Products Fig.2 Typical values of reverse current vs. reverse voltage 1000 1000 100 T j =175° T j =125° T j =25° 10 100 Reverse current-l R (µA) lnstantaneous forward current-I F (A) Fig.1 Typical forward voltage drop characteristics T j =175° T j =150° 10 T j =125° T j =100° 1 0.1 T j =25° 0.01 0.001 1 0.0001 0 0.5 1.5 1 2 2.5 3 3.5 0 100 Forward voltage drop-V F (V) 300 200 400 500 600 Reverse voltage-V R (V) Fig.3 Typical junction capacitance vs. reverse voltage Fig.4 Junction capacitance vs. reverse voltage 200 180 100 T j =25° 160 140 120 (pF) Junction capacitance, C J Junction Capactiance-C T (pF) 1000 100 80 60 40 20 10 0 0 100 200 300 400 500 600 1 10 100 200 Reverse voltage (V), V R Reverse voltage-V R (V) Fig.5 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.80 D = 0.9 0.70 0.60 0.7 0.50 Note: 0.5 0.40 0.30 PDM Thermal impedance(°C/W), Z θJC 0.90 0.3 t2 0.20 Duty Factor D =t 1 /t 2 SINGLE PULSE 0.1 0.10 t1 Peak T J = PDM xZ θ JC +T C 0.05 0 10-5 10-4 10-3 10-2 Rectangular pulse duration (seconds) www.nellsemi.com Page 3 of 6 10-1 1.0 RoHS N-30ETU06 RoHS SEMICONDUCTOR Nell High Power Products Fig.6 Max. allowable case temperature Vs. average forward current Fig.7 Reverse recovery time vs. current rate of change 200 160 DC 140 Square wave (D = 0.5) Rated VR applied 120 100 See note (1) 5 10 160 30A 140 120 100 15A 80 60 40 15 20 25 30 35 45 40 0 0 Average forward current IF(AV) (A) 400 600 800 1000 1200 Fig.9 Reverse recovery charge vs. current rate of change 1200 60 T J = 125°C Duty cycle = 0.5 V R = 400V 50 40 30 20 10 1000 60A 800 30A (nC) Reverse recovery charge, Q rr T J =175°C l F(AV) (A) 200 Current rate of change(A/μs), -di F /dt Fig.8 Maximum average forward current vs. case temperature 0 V R = 400V 20 80 0 T J = 125°C 60A 180 Reverse recovery time, t rr (ns) Allowable case temperature (°C) 180 600 15A 400 200 0 25 50 75 100 125 150 0 175 200 400 600 800 1000 Current rate of change (A/μs), -di F /dt Case temperature (°C) Ordering Information Tabel Device code N - 1 www.nellsemi.com 30 E T U 2 3 4 5 1 - Nell 2 - Current rating 3 - Single Diode 4 - TO-220AC or TO-220AB 5 - Ultrafast Recovery 6 - Voltage Rating (06 = 600 V) Page 4 of 6 06 (30 = 30A) E = 2 pins A = 3 pins 1200 RoHS N-30ETU06 RoHS SEMICONDUCTOR Nell High Power Products Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions www.nellsemi.com Page 5 of 6 RoHS N-30ETU06 RoHS SEMICONDUCTOR Nell High Power Products TO-220AC Package Outline N-30ETU06 2 pins 10.26 [0.404] 9.98 [0.393] Cathode 4.72 [0.186] 4.42 [0.174] 2.90 [ 0.114] 2.59 [0.102] 1.47 [0.058] 1.19 [0.047] Ø3.89 [0.153] Ø3.78 [0.149] 12.90 [0.508] 12.50 [0.492] 9.19 [0.362] 8.99 [0.354] 3.91 [0.154] 3.40 [0.134] 2.79 [ 0.110] 2.51 [0.099] 13.49 [0.531] 13.08 [0.515] 0.057 [1.45] 0.047 [1.19] Cathode Anode 0.46 [0.018] 0.36 [0.014] 0.034 [0.86] 0.030 [0.76] 2.54 [0.100] TYP Base cathode 2 5.18 [0.204] 4.98 [0.196] 1 Cathode 3 Anode TO-220AB Package Outline N-30ATU06 3 pins 10.26 [0.404] 9.98 [0.393] Cathode 4.72 [0.186] 4.42 [0.174] 2.90 [ 0.114] 2.59 [0.102] 1.47 [0.058] 1.19 [0.047] Ø3.89 [0.153] Ø3.78 [0.149] 12.90 [0.508] 12.50 [0.492] 9.19 [0.362] 8.99 [0.354] 3.91 [0.154] 3.40 [0.134] 2.79 [ 0.110] 2.51 [0.099] 13.49 [0.531] 13.08 [0.515] Cathode 0.057 [1.45] 0.047 [1.19] Anode 0.46 [0.018] 0.36 [0.014] 2.54 [0.100] TYP 5.18 [0.204] 4.98 [0.196] 0.034 [0.86] 0.030 [0.76] Base cathode 2 1 Anode www.nellsemi.com Page 6 of 6 3 Anode