RoHS RoHS N-40EPU06 Series SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 40 A FEATURES N-40APU06 N-40EPU06 Ultrafast recovery 175 °C operating junction temperature Designed and qualified for industrial level - BENEFITS Cathode to base Reduced RFI and EMI Cathode to base 2 Higher frequency operation 2 Reduced snubbing Reduced parts count 1 Cathode DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. 3 Anode 3 Anode 1 Anode TO-247AC modified TO-247AB PRODUCT SUMMARY trr 40 ns IF(AV) 40 A VR 600 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VR Cathode to anode voltage VALUES UNITS 600 V Continuous forward current lF(AV) TC = 116 °C 40 Single pulse forward current lFSM TC = 25 °C 360 T j , T Stg Operating junction and storage temperatures ELECTRICAL SPECIFICATIONS PARAMETER Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance VF lR CT - 55 to 175 °C (TJ = 25 ºC unless otherwise specified) SYMBOL V BR, Vr A TEST CONDITIONS MIN. TYP. MAX. 600 - - l F = 40A - 1.50 1.70 l F = 80A - 1.8 - l F = 40A, T J = 150°C - 1.20 - V R = V R rated - - 25 T J = 150°C, V R = V R rated - - 500 V R = 200V - 36 - l R = 100µA Page 1 of 6 UNITS V µA pF RoHS RoHS N-40EPU06 Series SEMICONDUCTOR Nell High Power Products DYNAMIC RECOVERY CHARACTERISTICS SYMBOL PARAMETER Reverse recovery time trr (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS MIN. TYP. MAX. I F = 0.5A, I R = 1A, I RR =0.25A (RG#1 CKT) - 36 45 I F = 1A, dI F /dt = -100 A/µs, V R =30V, T J =25°C - 22 - T J = 25°C - 25 - - 160 - T J = 125°C Peak recovery current lRRM Reverse recovery charge Qrr IF = 40 A dIF/dt = -200 A/µs VR = 400 V - 3 - - 6 - T J = 25°C - 35 - T J = 125°C - 480 - MIN. TYP. MAX. T J = 25°C T J = 125°C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS - - - 0.3 - - 5.5 - - 0.2 - oz. - 1.2 (10) N⋅ m (lbf . in) 0.67 °C/W Mounting surface, flat, smooth and greased Weight 0.6 (5) Mounting torque Marking device UNITS Case style TO-247AC modified 40EPU06 Case style TO-247AC 40APU06 g Fig.2 Typical values of reverse current vs. reverse voltage Fig.1 Forward current vs. forward voltage 120 1000 60 T J =125°C 40 T J =175°C T J =25°C 20 T j =175° T j =150° 10 (µA) Reverse current,l R 100 80 (A) Forward current, I F 100 T j =125° T j =100° 1 0.1 T j =25° 0.01 0.001 T J =-55°C 0.0001 0 0 0.6 0.9 1.2 1.5 1.8 0 2.1 Anode-to-cathode voltage (V), V F 100 200 300 400 500 Reverse voltage (V) , V R Page 2 of 6 600 N-40EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.3a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration Thermal impedance(°C/W), Z θJC 0.70 D = 0.9 0.60 0.50 0.7 0.40 0.5 : Note 0.3 0.20 0.10 0.1 10-5 10-4 t1 t2 Duty Factor D =t 1 /t 2 Peak T J = PDM xZ θ JC +T C SINGLE PULSE 0.05 0 PDM 0.30 10-3 10-2 10-1 1.0 Rectangular pulse duration (seconds) Fig.3b transient thermal impedance model RC MODEL Junction temp (°C) 0.289 0.00448 0.381 0.120 Power (watts) Case temperature (°C) Fig.5 Max. allowable case temperature Vs. average forward current Fig.4 Junction capacitance vs. reverse voltage 180 Allowable case temperature (°C) 180 160 140 (pF) Junction capacitance, C J 200 120 100 80 60 40 20 0 160 DC 140 Square wave (D = 0.5) Rated VR applied 120 100 See note (1) 80 1 10 0 100 200 10 20 25 30 35 40 45 50 Average forward current IF(AV) (A) reverse voltage (V), V R Page 3 of 6 60 N-40EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Reverse recovery time vs. current rate of change Fig 7. Reverse recovery current vs. current rate of change 180 25 V R = 400V 160 Reverse recovery time, t rr (ns) Reverse recovery current, l RRM (A) T J = 125°C 80A 140 40A 120 20A 100 80 60 40 20 0 T J = 125°C V R = 400V 80A 20 15 40A 10 20A 5 0 0 200 400 600 800 1000 1200 0 Current rate of change(A/μs), -di F /dt 200 400 600 800 1000 Fig.8 Reverse recovery charge vs. current rate of change 1400 Reverse recovery charge, Q rr (nC) T J = 125°C V R = 400V 1200 80A 1000 800 40A 600 400 20A 200 0 0 200 400 600 800 1000 1200 Current rate of change (A/μs), -di F /dt 1200 Current rate of change (A/μs), -di F /dt Ordering Information Tabel Device code N - 1 40 E P U 2 3 4 5 1 - Nell 2 - Current rating 3 - Single Diode 4 - TO-247AC (Modified) 5 - Ultrafast Recovery 6 - Voltage Rating (06 = 600 V) Page 4 of 6 06 (40 = 40A) E = 2 pins A = 3 pins N-40EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions Page 5 of 6 N-40EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Outine Table N-40EPU06 Outine Table N-40APU06 Page 6 of 6