RoHS NT90PT12S/NT90PT16S Series RoHS SEMICONDUCTOR Nell High Power Products Phase Control SCR, 90A K 40 G Φ6 .3 .5 R5 K 25 G A 15 40 52 All dimensions in millimeters FEATURES High surge capablilty High voltage input rectification Designed and qualified for industrial level Compliant to RoHS A APPLICATIONS K G AC switches High voltage input rectification (soft start) High current crow-bar Other phase-control circulits AC/DC electric machine control Heating control Dimming Converters PRODUCT SUMMARY Diode variation Single SCR IT(AV) 90A V DRM /V RRM 1200V , 1600V V TM 1.6V I GT 100 mA TJ -40ºC to 125ºC MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES IT(AV) Sinusoidal waveform 90 IT(RMS) Lead current limitation 141 VRRM/VDRM Range UNITS A 1200~1600 V 2000 A 1.6 V dV/dt 500 V/µs dI/dt 150 A/µs - 40 to 125 °C ITSM VT lT = 270 A, TJ = 25 °C TJ www.nellsemi.com Page 1 of 2 RoHS NT90PT12S/NT90PT16S Series RoHS SEMICONDUCTOR Nell High Power Products VOLTAGE RATINGS PART NUMBER VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V NT90PT12S 1200 1300 NT90PT16S 1600 1700 IRRM/IDRM AT 125 °C mA 10 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum continuous RMS on-state current as AC switch IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I t Maximum peak on-state forward voltage Maximum rate of rise of turned-on current 270 A, TJ = 25 °C dI/dt TJ = 25 °C , IGM =1.5A , tr ≤ 0.5µs IL IRRM/IDRM dV/dt 90 141 Initial TJ = TJ maximum T J = 25°C TJ = 25 °C TJ = 125 °C TJ = 125 °C Anode supply = 6 V resistive load A2s 1.6 V 150 A/µs 100 400 VR = Rated VRRM/VDRM (V R =2/3 V RRM /V DRM ) A 2000 20400 VTM Maximum latching current Maximum rate of rise of off-state voltage one-side heat-dissipation 2 IH VALUES UNITS TC = 85 ºC, 180° conduction half sine wave, 10 ms sine pulse, no voltage reapplied Maximum holding current Maximum reverse and direct leakage current TEST CONDITIONS 1.0 mA 10 500 V/µs TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power SYMBOL P GM P G(AV) Maximum required gate voltage to trigger VGT Maximum required gate current to trigger IGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger TEST CONDITIONS VALUES 10 T = 30 µs 3 Anode supply = 6 V resistive load TJ = 25 ºC TJ = 125 ºC ,V DRM = Rated value IGD UNITS W 1.5 V 100 mA 0.25 V 10 mA THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum junction temperature range TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance junction to case RthJC Maximum thermal resistance junction to ambient RthJA Typical thermal resistance case to heatsink RthCS DC operation Approximate weight Mounting torque www.nellsemi.com ºC/W 0.2 85 g 3 oz. For copper plate ,M6 4 For connecttion terminal ,M5 4 Page 2 of 2 ºC 0.28 40 Mounting surface, smooth and greased UNITS N.m